Refractive index and electro‐optic effect in compressive and tensile strained quantum wells
dc.contributor.author | Pamulapati, Jagadeesh | en_US |
dc.contributor.author | Loehr, John P. | en_US |
dc.contributor.author | Singh, J. | en_US |
dc.contributor.author | Bhattacharya, Pallab K. | en_US |
dc.contributor.author | Ludowise, M. J. | en_US |
dc.date.accessioned | 2010-05-06T22:33:34Z | |
dc.date.available | 2010-05-06T22:33:34Z | |
dc.date.issued | 1991-04-01 | en_US |
dc.identifier.citation | Pamulapati, J.; Loehr, J. P.; Singh, J.; Bhattacharya, P. K.; Ludowise, M. J. (1991). "Refractive index and electro‐optic effect in compressive and tensile strained quantum wells." Journal of Applied Physics 69(7): 4071-4074. <http://hdl.handle.net/2027.42/70690> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/70690 | |
dc.description.abstract | The effects of biaxial compressive and tensile strain on the excitonic resonances and associated changes in refractive index and electro‐optic effect in quantum wells have been calculated and measured. Theoretical calculations include the important heavy‐hole–light–hole band mixing effects. It is seen that the excitonic contributions dominate near the band edge. With increasing compressive strain the linear electro‐optic effect is slightly increased, while the quadratic effect is greatly enhanced. The effects are reversed in quantum wells under tensile strain. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 425921 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Refractive index and electro‐optic effect in compressive and tensile strained quantum wells | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Center for High‐Frequency Microelectronics, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109‐2122 | en_US |
dc.contributor.affiliationother | Hewlett‐Packard Laboratories, 3500 Deer Creek Road, Palo Alto, California 94304 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/70690/2/JAPIAU-69-7-4071-1.pdf | |
dc.identifier.doi | 10.1063/1.348418 | en_US |
dc.identifier.source | Journal of Applied Physics | en_US |
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dc.owningcollname | Physics, Department of |
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