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Low‐temperature homoepitaxial growth on nonplanar Si substrates
dc.contributor.authorAdams, David P.en_US
dc.contributor.authorYalisove, Steven M.en_US
dc.date.accessioned2010-05-06T22:35:26Z
dc.date.available2010-05-06T22:35:26Z
dc.date.issued1994-11-01en_US
dc.identifier.citationAdams, D. P.; Yalisove, S. M. (1994). "Low‐temperature homoepitaxial growth on nonplanar Si substrates." Journal of Applied Physics 76(9): 5185-5189. <http://hdl.handle.net/2027.42/70710>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70710
dc.description.abstractThe kinetics associated with the breakdown of epitaxy at low temperatures are studied for growth onto a number of Si surfaces, including (001), (117), (115), and (113). These surfaces are all initially generated at trench edges on a single patterned substrate. Growth on each of these surfaces at low temperatures is shown to result in a well‐defined crystalline‐to‐amorphous transition. The epitaxial thicknesses hepi have been measured over a range of substrate temperatures below 280 °C, and activation energies characteristic of this transition were determined. In general, the breakdown in epitaxy occurs such that hepi(001)≳hepi(117)≳hepi(115)≳hepi(113). Growth at slightly higher temperatures, Tsubstrate≳300 °C, shows a different microstructure than that at lower temperatures. Epitaxial growth continues for longer times on (113) facets, as compared with (001). These results are discussed in terms of a recently proposed model explaining the breakdown of epitaxy at lower temperatures and an epitaxial temperature for Si.en_US
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dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleLow‐temperature homoepitaxial growth on nonplanar Si substratesen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Materials Science and Engineering, University of Michigan, 2300 Hayward Street, Ann Arbor, Michigan 48109‐2136en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70710/2/JAPIAU-76-9-5185-1.pdf
dc.identifier.doi10.1063/1.357236en_US
dc.identifier.sourceJournal of Applied Physicsen_US
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dc.owningcollnamePhysics, Department of


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