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Transport properties of InAsxSb1−x (0≤x≤0.55) on InP grown by molecular‐beam epitaxy

dc.contributor.authorTsukamoto, S.en_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.contributor.authorChen, Y. C.en_US
dc.contributor.authorKim, J. H.en_US
dc.date.accessioned2010-05-06T22:35:38Z
dc.date.available2010-05-06T22:35:38Z
dc.date.issued1990-06-01en_US
dc.identifier.citationTsukamoto, S.; Bhattacharya, P.; Chen, Y. C.; Kim, J. H. (1990). "Transport properties of InAsxSb1−x (0≤x≤0.55) on InP grown by molecular‐beam epitaxy." Journal of Applied Physics 67(11): 6819-6822. <http://hdl.handle.net/2027.42/70712>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70712
dc.description.abstractMolecular‐beam epitaxy has been successfully used to grow InAsxSb1−x on InP substrates with good electrical characteristics. The samples are all n type with electron concentrations varying in the range (3–9)×1015 cm−3. The mobilities are high (70 000 and 110 000 cm2/V s at 300 and 77 K, respectively) in InSb and the alloys. More importantly, the mobilities remain high at the low temperatures in the alloys also, without any type conversion. The mobility data have been analyzed taking into account the appropriate scattering mechanisms. The alloy scattering potential in InAs0.24 Sb0.76 is estimated to be 0.3 V.en_US
dc.format.extent3102 bytes
dc.format.extent570122 bytes
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dc.format.mimetypeapplication/octet-stream
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleTransport properties of InAsxSb1−x (0≤x≤0.55) on InP grown by molecular‐beam epitaxyen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumSolid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109‐2122en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70712/2/JAPIAU-67-11-6819-1.pdf
dc.identifier.doi10.1063/1.345071en_US
dc.identifier.sourceJournal of Applied Physicsen_US
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dc.owningcollnamePhysics, Department of


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