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Impurity‐induced layer disordering of In0.53Ga0.47As/In0.52Al0.48As heterostructures
dc.contributor.authorBaird, R. J.en_US
dc.contributor.authorPotter, T. J.en_US
dc.contributor.authorLai, Richard K.en_US
dc.contributor.authorKothiyal, Govind P.en_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.date.accessioned2010-05-06T22:49:27Z
dc.date.available2010-05-06T22:49:27Z
dc.date.issued1988-12-05en_US
dc.identifier.citationBaird, R. J.; Potter, T. J.; Lai, R.; Kothiyal, G. P.; Bhattacharya, P. K. (1988). "Impurity‐induced layer disordering of In0.53Ga0.47As/In0.52Al0.48As heterostructures." Applied Physics Letters 53(23): 2302-2304. <http://hdl.handle.net/2027.42/70858>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70858
dc.description.abstractImpurity‐induced layer disordering of In0.53 Ga0.47 As/In0.52 Al0.48 As heterostructures grown by molecular beam epitaxy has been observed by Auger electron spectroscopy depth profiling. We find that Si+ ion implantation to concentrations greater than 2×1019 atoms cm−3 enhances the intermixing of Ga and Al in these heterostructures at an annealing temperature of 1075 K. However, the relatively high temperature which is required to activate the interdiffusion of Ga and Al in the region of high Si concentration is sufficient to induce In diffusion in regions of lower Si concentration. Zinc diffusion is found to completely intermix the Ga and Al in the heterolayers at temperatures as low as 825 K, which is below the temperature at which significant In diffusion occurs in undoped regions.en_US
dc.format.extent3102 bytes
dc.format.extent310885 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleImpurity‐induced layer disordering of In0.53Ga0.47As/In0.52Al0.48As heterostructuresen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumFord Motor Company, Research Staff, P. O. Box 2053, Dearborn, Michigan 48121‐2053en_US
dc.contributor.affiliationumSolid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109‐2122en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70858/2/APPLAB-53-23-2302-1.pdf
dc.identifier.doi10.1063/1.100260en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.identifier.citedreferenceThe SIMS depth profiles were measured by Charles Evans and Associates, Redwood City, CA using a Cs+Cs+ primary ion beam and negative ion detection.en_US
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dc.owningcollnamePhysics, Department of


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