Residual stresses in amorphous alumina films synthesized by ion beam assisted deposition
dc.contributor.author | Parfitt, L. | en_US |
dc.contributor.author | Goldiner, M. | en_US |
dc.contributor.author | Jones, J. Wayne | en_US |
dc.contributor.author | Was, Gary S. | en_US |
dc.date.accessioned | 2010-05-06T22:50:07Z | |
dc.date.available | 2010-05-06T22:50:07Z | |
dc.date.issued | 1995-04-01 | en_US |
dc.identifier.citation | Parfitt, L.; Goldiner, M.; Jones, J. W.; Was, G. S. (1995). "Residual stresses in amorphous alumina films synthesized by ion beam assisted deposition." Journal of Applied Physics 77(7): 3029-3036. <http://hdl.handle.net/2027.42/70865> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/70865 | |
dc.description.abstract | A set of experiments was conducted to determine the origin of residual stresses in amorphous Al2O3 films formed by ion beam assisted deposition. Samples were deposited during bombardment by Ne, Ar, or Kr over a narrow range of energies, E, and a wide range of ion‐to‐atom arrival rate ratios, R. Films were characterized in terms of composition, thickness, density, crystallinity, microstructure, and residual stress. Film composition was independent of ion beam parameters and residual stress was independent of thickness over the range 200–1200 nm. Stress varied strongly with ion beam parameters and gas content. Residual stress and gas content saturated at a normalized energy of ∼20 eV/atom or an R of ∼0.05. Where residual stress varied linearly with RE1/2, results are consistent with an atom peening model, but saturation at high R or RE1/2 is inconsistent with such a model. Stress due to gas pressure in existing voids explains neither the functional dependence on gas content nor the magnitude of the observed stress. A probable explanation for the behavior of stress is gas incorporation into the matrix, where the amount of incorporated gas is controlled by trapping. © 1995 American Institute of Physics. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 1159966 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Residual stresses in amorphous alumina films synthesized by ion beam assisted deposition | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109‐2104 | en_US |
dc.contributor.affiliationum | Department of Nuclear Engineering, University of Michigan, Ann Arbor, Michigan 48109‐2104 | en_US |
dc.contributor.affiliationum | Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109‐2104 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/70865/2/JAPIAU-77-7-3029-1.pdf | |
dc.identifier.doi | 10.1063/1.358652 | en_US |
dc.identifier.source | Journal of Applied Physics | en_US |
dc.identifier.citedreference | Surface Modification of Metals by Ion Beams, Proceedings of the Seventh International Conference on Surface Modification of Metals by Ion Beams, edited by F. A. Smidt, G. K. Hubler, and B. D. Sartwell (Elsevier Sequoia S. A., Lausanne, 1992). | en_US |
dc.identifier.citedreference | Surface Modification of Metals by Ion Beams, Proceedings of the Seventh International Conference on Surface Modification of Metals by Ion Beams, edited by M. Iwaki, B. D. Sartwell, and G. Dearnaley (Elsevier Sequoia S.A., Lausanne, in press). | en_US |
dc.identifier.citedreference | H. Windischmann, Crit. Rev. Solid State Mater. Sci. 17, 547 (1992). | en_US |
dc.identifier.citedreference | M. F. Doerner and W. D. Nix, Crit. Rev. Solid State Mater. Sci. 14, 225 (1988). | en_US |
dc.identifier.citedreference | E. Klokholm, J. Vac. Sci. Technol. 6, 138 (1969). | en_US |
dc.identifier.citedreference | F. M. D’Heurle and J. M. E. Harper, Thin Solid Films 171, 81 (1989). | en_US |
dc.identifier.citedreference | E. H. Hirsch and I. K. Varga, Thin Solid Films 69, 99 (1980). | en_US |
dc.identifier.citedreference | F. Seitz and J. S. Koehler, Solid State Phys. 69, 3Q5 (1956). | en_US |
dc.identifier.citedreference | D. W. Hoffman and J. A. Thornton, Thin Solid Films 40, 355 (1977). | en_US |
dc.identifier.citedreference | H. Windischmann, J. Appl. Phys. 65, 1800 (1987). | en_US |
dc.identifier.citedreference | P. Sigmund, Topics in Applied Physics: Sputtering by Ion Bombardment, edited by R. Behrisch (Springer, Berlin, 1981), Vol. 47. | en_US |
dc.identifier.citedreference | J. A. Thornton, J. Tabock, and D. W. Hoffman, Thin Solid Films 64, 111 (1979). | en_US |
dc.identifier.citedreference | V. Dietz, P. Ehrhart, D. Guggi, H.-G. Haubold, W. Jäger, M. Prieler, and W. Schilling, Nucl. Instrum. Methods Phys. Res. B 59∕60, 284 (1991). | en_US |
dc.identifier.citedreference | C. C. Fang, F. Jones, and V. Prasad, J. Appl. Phys. 74, 4472 (1993). | en_US |
dc.identifier.citedreference | D. W. Hoffman and M. R. Gaerttner, J. Vac. Sci. Technol. 17, 425 (1980). | en_US |
dc.identifier.citedreference | J. A. Thornton, J. Vac. Sci. Technol. 11, 666 (1974). | en_US |
dc.identifier.citedreference | L. R. Dolittle, Nucl. Instrum. Methods Phys. Res. B 9, 334 (1985). | en_US |
dc.identifier.citedreference | C. J. Brinker and S. P. Mukherji, Thin Solid Films 77, 141 (1981). | en_US |
dc.identifier.citedreference | J. A. Thornton, J. Tabock, and D. W. Hoffman, Thin Solid Films 64, 111 (1979). | en_US |
dc.identifier.citedreference | J. M. E. Harper, J. J. Cuomo, R. J. Gambino, and H. R. Kaufman, Nucl. Instrum. Methods Phys. Res. B 7∕8, 886 (1985). | en_US |
dc.identifier.citedreference | K. Kuwahara, T. Sumomogi, and M. Kondo, Thin Solid Films 78, 41 (1981). | en_US |
dc.identifier.citedreference | J. A. Thornton and D. W. Hoffman, Thin Solid Films 171, 5 (1989). | en_US |
dc.identifier.citedreference | A. Guinier and G. Fournet, Small-Angle Scattering of X-Rays (Wiley, New York, 1956). | en_US |
dc.identifier.citedreference | G. Porod, “General Theory,” in Small-Angle X-ray Scattering, edited by O. Glatter and O. Kratky (Academic, London, 1982). | en_US |
dc.identifier.citedreference | O. Kratky, I. Pilz, and P. J. Schmitz, J. Colloid Interface Sci. 21, 24 (1966). | en_US |
dc.identifier.citedreference | D. S. Lee, J. Floro, D. J. Nikalsen, J. J. Cuomo, K. Y. Ahn, and D. A. Smith, J. Vac. Sci. Technol. A 3, 2121 (1985). | en_US |
dc.identifier.citedreference | D. R. Brighton and G. K. Hubler, Nucl. Instrum. Methods Phys. B 28, 527 (1987). | en_US |
dc.identifier.citedreference | P. R. Kazansky, L. Hultman, I. Ivanov, and J.-E. Sundgren, J. Vac. Sci. Technol. A 11, 1426 (1993). | en_US |
dc.identifier.citedreference | B. N. Lucas and W. C. Oliver, Material Research Society Symposium (Materials Research Society, Pittsburgh, PA, 1992), Vol. 239, pp. 337–341. | en_US |
dc.identifier.citedreference | C. Ronchi, J. Nucl. Mater. 96, 314 (1981). | en_US |
dc.owningcollname | Physics, Department of |
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