View Item 

Show simple item record

Effects of stress relaxation of epitaxial SrRuO3SrRuO3 thin film on microstructures
dc.contributor.authorPan, Xiaoqingen_US
dc.contributor.authorJiang, J. C.en_US
dc.contributor.authorTian, Weien_US
dc.contributor.authorGan, Q.en_US
dc.contributor.authorRao, R. A.en_US
dc.contributor.authorEom, Chang-Beomen_US
dc.date.accessioned2010-05-06T22:51:15Z
dc.date.available2010-05-06T22:51:15Z
dc.date.issued1999-10-15en_US
dc.identifier.citationPan, X. Q.; Jiang, J. C.; Tian, W.; Gan, Q.; Rao, R. A.; Eom, C. B. (1999). "Effects of stress relaxation of epitaxial SrRuO3SrRuO3 thin film on microstructures." Journal of Applied Physics 86(8): 4188-4191. <http://hdl.handle.net/2027.42/70877>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70877
dc.description.abstractWe report the effect of lattice stress relaxation on the microstructures of epitaxial thin films by domain structure studies of epitaxial SrRuO3SrRuO3 thin films grown on vicinal (001) SrTiO3SrTiO3 substrates. X-ray diffraction analysis revealed that the as-grown films are single domain and have a strained lattice due to the lattice mismatch with the substrate. In contrast, plan-view transmission electron microscopy (TEM) images obtained from the same films showed the coexistence of domains with three different crystallographic orientations. The discrepancy is attributed to the lattice stress relaxation occurring on the TEM specimens as the substrate material is eliminated by ion milling or etching, resulting in the formation of elastic domains with different crystallographic orientations. These studies directly reveal a crucial effect of the lattice strain relaxation on the microstructures and properties of epitaxial thin films when the substrate material is removed. © 1999 American Institute of Physics.en_US
dc.format.extent3102 bytes
dc.format.extent294441 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleEffects of stress relaxation of epitaxial SrRuO3SrRuO3 thin film on microstructuresen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Materials Science & Engineering, The University of Michigan, Ann Arbor, Michigan 48109en_US
dc.contributor.affiliationotherDepartment of Mechanical Engineering and Materials Science, Duke University, Durham, North Carolina 27708en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70877/2/JAPIAU-86-8-4188-1.pdf
dc.identifier.doi10.1063/1.371345en_US
dc.identifier.sourceJournal of Applied Physicsen_US
dc.identifier.citedreferenceS. Jin, T. H. Tiefel, M. McCormack, R. A. Pastnacht, R. Ramesh, and L. H. Chen, Science SCIEAS264, 413 (1994).en_US
dc.identifier.citedreferenceC. B. Eom, R. J. Cava, R. M. Fleming, J. M. Philips, R. B. van Dover, J. H. Marshall, J. W. P. Hsu, J. J. Krajewski, and W. F. Peck, Science SCIEAS258, 258 (1992).en_US
dc.identifier.citedreferenceC. B. Eom, R. B. Van Dover, J. M. Philips, D. J. Werder, J. H. Marshall, C. H. Chen, R. J. Cava, R. M. Fleming, and D. K. Fork, Appl. Phys. Lett. APPLAB63, 2570 (1993).en_US
dc.identifier.citedreferenceL. Klein, J. S. Dodge, C. H. Ahn, G. J. Snyder, T. J. Geballe, M. R. Beasley, and A. Kapitulnik, Phys. Rev. Lett. PRLTAO77, 2774 (1996); L. Klein, J. S. Dodge, T. H. Geballe, A. Kapitulnik, A. F. Marshall, L. Antognazza, and K. Char, Appl. Phys. Lett. APPLAB66, 2427 (1995).en_US
dc.identifier.citedreferenceD. B. Kacedon, R. A. Rao, and C. B. Eom, Appl. Phys. Lett. APPLAB71, 1724 (1997).en_US
dc.identifier.citedreferenceS. C. Gausepohl, M. Lee, K. Char, R. A. Rao, and C. B. Eom, Phys. Rev. B PRBMDO52, 3459 (1995).en_US
dc.identifier.citedreferenceS. C. Gausepohl, M. Lee, R. A. Rao, and C. B. Eom, Phys. Rev. B PRBMDO54, 8996 (1996).en_US
dc.identifier.citedreferenceR. A. Rao, Q. Gan, and C. B. Eom, Appl. Phys. Lett. APPLAB71, 1171 (1997).en_US
dc.identifier.citedreferenceJ. C. Jiang, X. Pan, and C. L. Chen, Appl. Phys. Lett. APPLAB72, 909 (1998).en_US
dc.identifier.citedreferenceJ. C. Jiang, X. Pan, W. Tian, Q. Gan, and C. B. Eom, Appl. Phys. Lett. APPLAB72, 2963 (1998).en_US
dc.identifier.citedreferenceQ. Gan, R. A. Rao, and C. B. Eom, Appl. Phys. Lett. APPLAB70, 1962 (1997).en_US
dc.identifier.citedreferenceS. Geller, J. Chem. Phys. JCPSA624, 1236 (1956).en_US
dc.identifier.citedreferenceC. W. Jones, P. D. Battle, P. Lightfoot, and W. T. A. Harrison, Acta Crystallogr; Sect. C: Cryst. Struct. Comm. ACSCEEC45, 365 (1989).en_US
dc.identifier.citedreferenceQ. Gan, R. A. Rao, C. B. Eom, J. L. Garrett, and M. Lee, Appl. Phys. Lett. APPLAB72, 978 (1998).en_US
dc.owningcollnamePhysics, Department of


Files in this item

Name:
JAPIAU-86-8-4188-1.pdf
Size:
287.5KB
Format:
PDF
View/Open

Show simple item record

Remediation of Harmful Language

The University of Michigan Library aims to describe library materials in a way that respects the people and communities who create, use, and are represented in our collections. Report harmful or offensive language in catalog records, finding aids, or elsewhere in our collections anonymously through our metadata feedback form. More information at Remediation of Harmful Language.

Accessibility

If you are unable to use this file in its current format, please select the Contact Us link and we can modify it to make it more accessible to you.