Structural and luminescence characteristics of cycled submonolayer InAs/GaAs quantum dots with room-temperature emission at 1.3 μm
dc.contributor.author | Krishna, Sanjay | en_US |
dc.contributor.author | Zhu, D. | en_US |
dc.contributor.author | Xu, J. | en_US |
dc.contributor.author | Linder, Kojo K. | en_US |
dc.contributor.author | Qasaimeh, Omar | en_US |
dc.contributor.author | Bhattacharya, Pallab K. | en_US |
dc.contributor.author | Huffaker, D. L. | en_US |
dc.date.accessioned | 2010-05-06T22:53:08Z | |
dc.date.available | 2010-05-06T22:53:08Z | |
dc.date.issued | 1999-12-01 | en_US |
dc.identifier.citation | Krishna, S.; Zhu, D.; Xu, J.; Linder, K. K.; Qasaimeh, O.; Bhattacharya, P.; Huffaker, D. L. (1999). "Structural and luminescence characteristics of cycled submonolayer InAs/GaAs quantum dots with room-temperature emission at 1.3 μm." Journal of Applied Physics 86(11): 6135-6138. <http://hdl.handle.net/2027.42/70897> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/70897 | |
dc.description.abstract | Quantum dots were grown by molecular beam epitaxy on GaAs substrates using a cycled submonolayer InAs/GaAs deposition technique. Their structural and luminescence characteristics have been compared with conventional self-organized dots. The room-temperature luminescence spectra are characterized by a ground state transition at 1.3 μm and additional transitions corresponding to excited states. Cross-sectional transmission electron microscopy indicates that no dislocations are formed if the total InAs thickness is less than 5–6 monolayers. Temperature dependence of the photoluminescence indicates that both types of quantum dots may have nonradiative defects, caused by segregation and related phenomena. © 1999 American Institute of Physics. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 297570 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Structural and luminescence characteristics of cycled submonolayer InAs/GaAs quantum dots with room-temperature emission at 1.3 μm | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 | en_US |
dc.contributor.affiliationother | Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Texas 78712-1084 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/70897/2/JAPIAU-86-11-6135-1.pdf | |
dc.identifier.doi | 10.1063/1.371664 | en_US |
dc.identifier.source | Journal of Applied Physics | en_US |
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dc.owningcollname | Physics, Department of |
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