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Excitonic energies and inhomogeneous line broadening effects in InAlAs/InGaAs modulator structures
dc.contributor.authorHong, S.en_US
dc.contributor.authorSingh, J.en_US
dc.date.accessioned2010-05-06T22:54:11Z
dc.date.available2010-05-06T22:54:11Z
dc.date.issued1987-09-01en_US
dc.identifier.citationHong, S.; Singh, J. (1987). "Excitonic energies and inhomogeneous line broadening effects in InAlAs/InGaAs modulator structures." Journal of Applied Physics 62(5): 1994-1999. <http://hdl.handle.net/2027.42/70908>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70908
dc.description.abstractThe exciton problem in the In0.52Al0.48As/In0.53Ga0.47As quantum well in the presence of static transverse electric field is studied. We report results on variation of exciton size, binding energies, and emission energies as a function of electric field and well size. Inhomogeneous line broadening of exciton lines due to interface roughness and alloy disorder is also calculated. Alloy disorder in the well and barrier regions is found to be very important and its control may be critical in the performance of this system as a high efficiency modulator.en_US
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dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleExcitonic energies and inhomogeneous line broadening effects in InAlAs/InGaAs modulator structuresen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109‐2122en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70908/2/JAPIAU-62-5-1994-1.pdf
dc.identifier.doi10.1063/1.339539en_US
dc.identifier.sourceJournal of Applied Physicsen_US
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dc.owningcollnamePhysics, Department of


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