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Filament activated chemical vapor deposition of boron carbide coatings
dc.contributor.authorDeshpande, Sadanand V.en_US
dc.contributor.authorGulari, Erdoganen_US
dc.contributor.authorHarris, Stephen J.en_US
dc.contributor.authorWeiner, Anita M.en_US
dc.date.accessioned2010-05-06T22:55:13Z
dc.date.available2010-05-06T22:55:13Z
dc.date.issued1994-10-03en_US
dc.identifier.citationDeshpande, Sadanand V.; Gulari, Erdogan; Harris, Stephen J.; Weiner, Anita M. (1994). "Filament activated chemical vapor deposition of boron carbide coatings." Applied Physics Letters 65(14): 1757-1759. <http://hdl.handle.net/2027.42/70919>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70919
dc.description.abstractIn this study, we have demonstrated that boron carbide, an extremely hard and wear‐resistant material, can be deposited with hot filament‐activated chemical vapor deposition (HFCVD). There are several benefits to using a hot filament system, including a high deposition rate and a relatively low substrate temperature with a process that is not line‐of‐sight. High purity, apparently amorphous boron carbide films were obtained by the use of a chlorine based precursor (which is less toxic than diborane). This indicates that either the hot filament helps in complete decomposition of BCl3 or the presence of high concentration of atomic hydrogen in a HFCVD environment helps in scavenging the chlorine. © 1994 American Institue of Physics.en_US
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dc.format.extent128901 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleFilament activated chemical vapor deposition of boron carbide coatingsen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Chemical Engineering, University of Michigan, Ann Arbor, Michigan 48109en_US
dc.contributor.affiliationumPhysical Chemistry, General Motors Research & Development Center, Warren, Michigan 48090‐9055en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70919/2/APPLAB-65-14-1757-1.pdf
dc.identifier.doi10.1063/1.112909en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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