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1.4 ps rise‐time high‐voltage photoconductive switching
dc.contributor.authorMotet, T.en_US
dc.contributor.authorNees, John A.en_US
dc.contributor.authorWilliamson, Stevenen_US
dc.contributor.authorMourou, Gerard A.en_US
dc.date.accessioned2010-05-06T22:55:47Z
dc.date.available2010-05-06T22:55:47Z
dc.date.issued1991-09-16en_US
dc.identifier.citationMotet, T.; Nees, J.; Williamson, S.; Mourou, G. (1991). "1.4 ps rise‐time high‐voltage photoconductive switching." Applied Physics Letters 59(12): 1455-1457. <http://hdl.handle.net/2027.42/70925>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70925
dc.description.abstractWe report on the generation of 825 V electrical pulses with 1.4 ps rise time and 4.0 ps duration using a pulse‐biased low‐temperature‐grown GaAs photoconductive switch triggered by an amplified femtosecond dye laser. Dependence of the pulse shape on both electric field and optical energy is observed and discussed.en_US
dc.format.extent3102 bytes
dc.format.extent316559 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.title1.4 ps rise‐time high‐voltage photoconductive switchingen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumUniversity of Michigan, Ultrafast Science Laboratory, Ann Arbor, Michigan 48109‐2099en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70925/2/APPLAB-59-12-1455-1.pdf
dc.identifier.doi10.1063/1.105286en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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