Epitaxial SnO2SnO2 thin films grown on (012)(1̄012) sapphire by femtosecond pulsed laser deposition

Abstract

An ultrafast (100 fs) Ti sapphire laser (780 nm) was used for the deposition of SnO2SnO2 thin films. The laser-induced plasma generated from the SnO2SnO2 target was characterized by optical emission spectroscopy and electrostatic energy analysis. It was found that the ionic versus excited-neutral component ratio in the plasma plume depends strongly on the amount of background oxygen introduced to the deposition chamber. Epitaxial SnO2SnO2 films with high quality and a very smooth surface were deposited on the (012)(1̄012) sapphire substrate fabricated at 700 °C with an oxygen background pressure of ∼0.1 mTorr. The films are single crystalline with the rutile structure, resulting from the high similarity in oxygen octahedral configurations between the sapphire (012)(1̄012) surface and the SnO2SnO2 (101) surface. Hall effect measurements showed that the electron mobility of the SnO2SnO2 film is lower than that of bulk single crystal SnO2,SnO2, which is caused by the scattering of conduction electrons at the film surface, substrate/film interface, and crystal defects. © 2002 American Institute of Physics.