Charge control and mobility in AlGaN/GaN transistors: Experimental and theoretical studies
dc.contributor.author | Zhang, Yifei | en_US |
dc.contributor.author | Smorchkova, I. P. | en_US |
dc.contributor.author | Elsass, C. R. | en_US |
dc.contributor.author | Keller, Stacia | en_US |
dc.contributor.author | Ibbetson, James P. | en_US |
dc.contributor.author | Denbaars, Steven | en_US |
dc.contributor.author | Mishra, Umesh K. | en_US |
dc.contributor.author | Singh, Jasprit | en_US |
dc.date.accessioned | 2010-05-06T22:55:59Z | |
dc.date.available | 2010-05-06T22:55:59Z | |
dc.date.issued | 2000-06-01 | en_US |
dc.identifier.citation | Zhang, Yifei; Smorchkova, I. P.; Elsass, C. R.; Keller, Stacia; Ibbetson, James P.; Denbaars, Steven; Mishra, Umesh K.; Singh, Jasprit (2000). "Charge control and mobility in AlGaN/GaN transistors: Experimental and theoretical studies." Journal of Applied Physics 87(11): 7981-7987. <http://hdl.handle.net/2027.42/70927> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/70927 | |
dc.description.abstract | In this article we report on two dimensional sheet charge and mobility in GaN/AlGaN heterostructure field effect transistors. Both experimental and theoretical results are presented. Experimental results are reported on samples grown by metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). Theoretical studies are done to examine how spontaneous polarization and piezoelectric effect control the sheet charge density. The studies also focus on how interface roughness, aluminum mole fraction in the barrier and phonon scattering influence mobility. We find that interface roughness is a dominant source of scattering in the samples reported. Due to the variation in growth techniques we find that the MBE samples have a smoother interface compared to the MOCVD samples. By carefully fitting the experimental data we present results on interface roughness parameters for MBE and MOCVD samples. © 2000 American Institute of Physics. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 143519 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Charge control and mobility in AlGaN/GaN transistors: Experimental and theoretical studies | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Applied Physics Program, The University of Michigan at Ann Arbor, Ann Arbor, Michigan 48109-1120 | en_US |
dc.contributor.affiliationum | Department of Electrical Engineering and Computer Science, The University of Michigan at Ann Arbor, Ann Arbor, Michigan 48109-2122 | en_US |
dc.contributor.affiliationother | Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/70927/2/JAPIAU-87-11-7981-1.pdf | |
dc.identifier.doi | 10.1063/1.373483 | en_US |
dc.identifier.source | Journal of Applied Physics | en_US |
dc.identifier.citedreference | S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada, and T. Mukai, Jpn. J. Appl. Phys., Part 2 JAPLD834, L1332 (1995); S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, Appl. Phys. Lett. APPLAB69, 3034 (1996). | en_US |
dc.identifier.citedreference | G. E. Bulman et al., Electron. Lett. ELLEAK33, 1556 (1997). | en_US |
dc.identifier.citedreference | M. P. Mack, A. Abare, M. Aizcorbe, P. Kozodoy, S. Keller, U. K. Mishra, L. Coldren, and S. DenBaars, MRS Internet J. Nitride Semicond. Res. MIJNF72, 41 (1997). | en_US |
dc.identifier.citedreference | A. Kuramata, K. Domen, R. Soejima, K. Horino, S. Kubota, and T. Tanahashi, Jpn. J. Appl. Phys., Part 2 JAPLD836, L1130 (1997). | en_US |
dc.identifier.citedreference | O. Aktas, Z. F. Fan, A. Botchkarev, S. N. Mohammad, M. Roth, T. Jenkins, L. Kehias, and H. Morkoc, IEEE Electron Device Lett. EDLEDZ18, 293 (1997). | en_US |
dc.identifier.citedreference | M. S. Shur and M. A. Kahn, MRS Bull. MRSBEA22, 44 (1997). | en_US |
dc.identifier.citedreference | Y. F. Wu, S. Keller, P. Kozodoy, B. P. Keller, P. Parikh, D. Kapolnek, S. P. DenBaars, and U. K. Mishra, IEEE Electron Device Lett. EDLEDZ18, 290 (1997). | en_US |
dc.identifier.citedreference | U. K. Mishra, Y. F. Wu, B. P. Keller, S. Keller, and S. P. DenBaars, IEEE Trans. Microwave Theory Tech. IETMAB46, 756 (1998). | en_US |
dc.identifier.citedreference | R. Dimitrov, L. Wittmer, H. P. Felsl, A. Mitchell, O. Ambacher, and M. Stutzmann, Phys. Status Solidi A PSSABA168, R7 (1998). | en_US |
dc.identifier.citedreference | F. Bernardini, V. Fiorentini, and D. Vanderbilt, Phys. Rev. B PRBMDO56, R10024 (1997). | en_US |
dc.identifier.citedreference | W. Q. Chen and S. K. Hark, J. Appl. Phys. JAPIAU77, 5747 (1995). | en_US |
dc.identifier.citedreference | O. Ambacher et al., J. Appl. Phys. JAPIAU85, 3222 (1999). | en_US |
dc.identifier.citedreference | C.-K. Sun, S. Keller, T.-L. Chiu, G. Wang, M. S. Minsky, J. E. Bowers, and S. P. DenBaars, IEEE J. Sel. Top. Quantum Electron. IJSQEN3, 731 (1997). | en_US |
dc.identifier.citedreference | I. P. Smorchkova et al., J. Appl. Phys. JAPIAU86, 4520 (1999). | en_US |
dc.identifier.citedreference | A. Polian, M. Grimsditch, and I. Grzegory, J. Appl. Phys. JAPIAU79, 3343 (1996). | en_US |
dc.identifier.citedreference | Properties of Group III Nitrides, edited by, J. H. Edgar (INSPEC, London, 1994). | en_US |
dc.identifier.citedreference | Y. Zhang and J. Singh, J. Appl. Phys. JAPIAU85, 587 (1999). | en_US |
dc.identifier.citedreference | See for example, D. K. Ferry, Semiconductors (Macmillan, New York, 1991). | en_US |
dc.owningcollname | Physics, Department of |
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