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Electric‐field dependence of acceptor‐level binding energies in strained SiGe and InGaAs quantum‐well structures
dc.contributor.authorLoehr, John P.en_US
dc.contributor.authorSingh, Jaspriten_US
dc.date.accessioned2010-05-06T22:59:05Z
dc.date.available2010-05-06T22:59:05Z
dc.date.issued1992-02-15en_US
dc.identifier.citationLoehr, John P.; Singh, Jasprit (1992). "Electric‐field dependence of acceptor‐level binding energies in strained SiGe and InGaAs quantum‐well structures." Journal of Applied Physics 71(4): 2023-2024. <http://hdl.handle.net/2027.42/70960>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70960
dc.description.abstractThe acceptor energies for strained SiGe (on Si) and InGaAs (on GaAs) quantum wells are calculated from a 4×4 k⋅p band structure that includes the effects of strain and electric fields. Both center‐ and edge‐doped cases are examined. The theory shows marked changes in the acceptor energies with both strain and electric field. The wide variation in binding energy for the edge‐doped quantum wells may provide a mechanism for tunable far‐infrared detectors.en_US
dc.format.extent3102 bytes
dc.format.extent270199 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleElectric‐field dependence of acceptor‐level binding energies in strained SiGe and InGaAs quantum‐well structuresen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumCenter for High Frequency Microelectronics, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109‐2122en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70960/2/JAPIAU-71-4-2023-1.pdf
dc.identifier.doi10.1063/1.351143en_US
dc.identifier.sourceJournal of Applied Physicsen_US
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dc.owningcollnamePhysics, Department of


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