Optical time‐of‐flight measurement of carrier transport in GaAs/AlxGa1−xAs and In0.53Ga0.47As/In0.52Al0.48As multiquantum wells

Gupta, S.; Davis, L.; Bhattacharya, Pallab K.

Optical time‐of‐flight measurement of carrier transport in GaAs/AlxGa1−xAs and In0.53Ga0.47As/In0.52Al0.48As multiquantum wells

dc.contributor.author	Gupta, S.	en_US
dc.contributor.author	Davis, L.	en_US
dc.contributor.author	Bhattacharya, Pallab K.	en_US
dc.date.accessioned	2010-05-06T22:59:28Z
dc.date.available	2010-05-06T22:59:28Z
dc.date.issued	1992-03-23	en_US
dc.identifier.citation	Gupta, S.; Davis, L.; Bhattacharya, P. K. (1992). "Optical time‐of‐flight measurement of carrier transport in GaAs/AlxGa1−xAs and In0.53Ga0.47As/In0.52Al0.48As multiquantum wells." Applied Physics Letters 60(12): 1456-1458. <http://hdl.handle.net/2027.42/70964>	en_US
dc.identifier.uri	https://hdl.handle.net/2027.42/70964
dc.description.abstract	An all‐optical time‐of‐flight technique is used for measuring perpendicular carrier transport in semiconductor heterostructures and multiquantum wells (MQWs). This technique is based on measuring a change in surface reflectance due to the absorption nonlinearities induced by the carriers, and has a temporal resolution of ∼1 ps. Typical results on a GaAs/AlxGa1−xAs MQW and an In0.53Ga0.47As/In0.52Al0.48As MQW are compared. The observed fast transport times can only be explained by a field‐dependent carrier emission out of the quantum well, after which transport through the continuum states can occur. Due to larger barriers in the In0.53Ga0.47As/In0.52Al0.48As system, this intrinsic limit to transport is much larger, and hence these devices are observed to be slower than their GaAs/AlxGa1−xAs counterparts.	en_US
dc.format.extent	3102 bytes
dc.format.extent	446755 bytes
dc.format.mimetype	text/plain
dc.format.mimetype	application/pdf
dc.publisher	The American Institute of Physics	en_US
dc.rights	© The American Institute of Physics	en_US
dc.title	Optical time‐of‐flight measurement of carrier transport in GaAs/AlxGa1−xAs and In0.53Ga0.47As/In0.52Al0.48As multiquantum wells	en_US
dc.type	Article	en_US
dc.subject.hlbsecondlevel	Physics	en_US
dc.subject.hlbtoplevel	Science	en_US
dc.description.peerreviewed	Peer Reviewed	en_US
dc.contributor.affiliationum	Solid State Electronics Laboratory and Ultrafast Science Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109‐2122	en_US
dc.description.bitstreamurl	http://deepblue.lib.umich.edu/bitstream/2027.42/70964/2/APPLAB-60-12-1456-1.pdf
dc.identifier.doi	10.1063/1.107269	en_US
dc.identifier.source	Applied Physics Letters	en_US
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dc.owningcollname	Physics, Department of

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