Evidence of interdot electronic tunneling in vertically coupled In0.4Ga0.6AsIn0.4Ga0.6As self-organized quantum dots
dc.contributor.author | Urayama, J. | en_US |
dc.contributor.author | Norris, Theodore B. | en_US |
dc.contributor.author | Kochman, Boaz | en_US |
dc.contributor.author | Singh, J. | en_US |
dc.contributor.author | Bhattacharya, Pallab K. | en_US |
dc.date.accessioned | 2010-05-06T23:00:24Z | |
dc.date.available | 2010-05-06T23:00:24Z | |
dc.date.issued | 2000-04-24 | en_US |
dc.identifier.citation | Urayama, J.; Norris, T. B.; Kochman, B.; Singh, J.; Bhattacharya, P. (2000). "Evidence of interdot electronic tunneling in vertically coupled In0.4Ga0.6AsIn0.4Ga0.6As self-organized quantum dots." Applied Physics Letters 76(17): 2394-2396. <http://hdl.handle.net/2027.42/70974> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/70974 | |
dc.description.abstract | Ultrafast differential transmission spectroscopy with a resonant pump reveals evidence of electronic tunneling among the excited levels of vertically aligned In0.4Ga0.6AsIn0.4Ga0.6As self-organized quantum dots. This evidence of tunneling is observed as a rapid spectral redistribution of electrons within a few hundred femtoseconds of optical excitation. Measurements show that this spectral spread is independent of carrier density and, therefore, indicate that carrier–carrier scattering is not the main mechanism for carrier redistribution. Instead, electronic tunneling is responsible for the interdot coupling; tunneling rate calculations agree reasonably with the experiment, supporting this conclusion. © 2000 American Institute of Physics. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 46124 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Evidence of interdot electronic tunneling in vertically coupled In0.4Ga0.6AsIn0.4Ga0.6As self-organized quantum dots | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Center for Ultrafast Optical Science, The University of Michigan, Ann Arbor, Michigan 48109-2099 | en_US |
dc.contributor.affiliationum | Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2122 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/70974/2/APPLAB-76-17-2394-1.pdf | |
dc.identifier.doi | 10.1063/1.126356 | en_US |
dc.identifier.source | Applied Physics Letters | en_US |
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dc.owningcollname | Physics, Department of |
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