Show simple item record

Room-temperature far-infrared emission from a self-organized InGaAs/GaAs quantum-dot laser

dc.contributor.authorKrishna, Sanjayen_US
dc.contributor.authorQasaimeh, Omaren_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.contributor.authorMcCann, Patrick J.en_US
dc.contributor.authorNamjou, Khosrowen_US
dc.date.accessioned2010-05-06T23:00:35Z
dc.date.available2010-05-06T23:00:35Z
dc.date.issued2000-06-05en_US
dc.identifier.citationKrishna, Sanjay; Qasaimeh, Omar; Bhattacharya, Pallab; McCann, Patrick J.; Namjou, Khosrow (2000). "Room-temperature far-infrared emission from a self-organized InGaAs/GaAs quantum-dot laser." Applied Physics Letters 76(23): 3355-3357. <http://hdl.handle.net/2027.42/70976>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70976
dc.description.abstractFar-infrared spontaneous emission at 300 K and lower temperatures, due to intersubband transitions in self-organized In0.4Ga0.6As/GaAsIn0.4Ga0.6As/GaAs quantum dots, has been characterized. Measurements were made with a multidot layer near-infrared (∼1 μm) interband laser. The far-infrared signal, centered at 12 μm, was enhanced after the interband transition reached threshold at 300 K. The results are explained in terms of the carrier dynamics in the dots. © 2000 American Institute of Physics.en_US
dc.format.extent3102 bytes
dc.format.extent65207 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleRoom-temperature far-infrared emission from a self-organized InGaAs/GaAs quantum-dot laseren_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumSolid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122en_US
dc.contributor.affiliationotherLaboratory for Electronic Properties of Materials, School of Electrical and Computer Engineering, University of Oklahoma, Norman, Oklahoma 73019-1023en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70976/2/APPLAB-76-23-3355-1.pdf
dc.identifier.doi10.1063/1.126646en_US
dc.identifier.sourceApplied Physics Lettersen_US
dc.identifier.citedreferenceM. Helm, P. England, E. Colas, F. DeRosa, and S. J. Allen, Jr., Phys. Rev. Lett. PRLTAO63, 74 (1989).en_US
dc.identifier.citedreferenceS. Sauvage, Z. Moussa, P. Boucaud, and F. H. Julien, Appl. Phys. Lett. APPLAB70, 1345 (1997).en_US
dc.identifier.citedreferenceC. Sirtori, F. Capasso, J. Faist, D. L. Sivco, A. L. Hutchinson, and A. Y. Cho, Appl. Phys. Lett. APPLAB66, 4 (1995).en_US
dc.identifier.citedreferenceJ. Faist, F. Capasso, D. Sivco, C. Sirtori, A. L. Hutchinson, and A. Y. Cho, Science SCIEAS264, 553 (1994).en_US
dc.identifier.citedreferenceJ. Faist, F. Capasso, D. L. Sivco, A. L. Hutchinson, C. Sirtori, and A. Y. Cho, Infrared Phys. Technol. IPTEEY36, 99 (1995).en_US
dc.identifier.citedreferenceJ. Faist, F. Capasso, C. Sirtori, D. Sivco, A. L. Hutchinson, S-N. G. Chu, and A. Y. Cho, Appl. Phys. Lett. APPLAB64, 1144 (1994).en_US
dc.identifier.citedreferenceM. Grayson, D. C. Tsui, M. Shayegan, K. Hirakawa, R. A. Ghanbari, and H. I. Smith, Appl. Phys. Lett. APPLAB67, 1564 (1995).en_US
dc.identifier.citedreferenceP. J. McCann, K. Namjou, and X. M. Fang, Appl. Phys. Lett. APPLAB75, 3608 (1999).en_US
dc.identifier.citedreferenceJ. Phillips, P. Bhattacharya, S. W. Kennerly, D. W. Beekman, and M. Dutta, IEEE J. Quantum Electron. IEJQA735, 936 (1999).en_US
dc.identifier.citedreferenceS. Maimon, E. Finkman, G. Bahir, S. E. Schacham, J. M. Garcia, and P. M. Petroff, Appl. Phys. Lett. APPLAB73, 2003 (1998).en_US
dc.identifier.citedreferenceD. Pan, E. Towe, and S. Kennerly, Appl. Phys. Lett. APPLAB73, 1937 (1998).en_US
dc.identifier.citedreferenceL. E. Voro’bev, D. A. Firsov, V. A. Shalygin, V. N. Tulupenko, Yu. M. Shemyakov, N. N. Ledentsov, V. M. Ustinov, and Zh. I. Alferov, JETP Lett. JTPLA267, 275 (1998).en_US
dc.identifier.citedreferenceH. Jiang and J. Singh, Phys. Rev. B PRBMDO56, 4696 (1996).en_US
dc.identifier.citedreferenceK. Kamath, N. Chervala, K. K. Linder, T. Sosnowski, H.-T. Jiang, T. Norris, J. Singh, and P. Bhattacharya, Appl. Phys. Lett. APPLAB71, 927 (1997).en_US
dc.identifier.citedreferenceD. Klotzkin, K. Kamath, and P. Bhattacharya, IEEE Photonics Technol. Lett. IPTLEL9, 1301 (1997).en_US
dc.identifier.citedreferenceR. Heitz, M. Veit, N. N. Ledenstov, A. Hoffmann, D. Bimberg, V. M. Ustinov, P. S. Ko’pev, and Zh. I. Alferov, Phys. Rev. B PRBMDO56, 10435 (1997).en_US
dc.identifier.citedreferenceD. Morris, N. Perret, and S. Fafard, Appl. Phys. Lett. APPLAB75, 3593 (1999).en_US
dc.identifier.citedreferenceT. Sosnowski, T. Norris, H. Jiang, J. Singh, K. Kamath, and P. Bhattacharya, Phys. Rev. B PRBMDO57, R9423 (1998).en_US
dc.identifier.citedreferenceJ. Singh, IEEE Photonics Technol. Lett. IPTLEL8, 488 (1996).en_US
dc.identifier.citedreferenceK. Kamath, N. Chervala, K. K. Linder, T. Sosnowski, H.-T. Jiang, T. Norris, J. Singh, and P. Bhattacharya, Appl. Phys. Lett. APPLAB71, 927 (1997).en_US
dc.identifier.citedreferenceK. Kamath, P. Bhattacharya, and J. Phillips, J. Cryst. Growth JCRGAE175/176, 720 (1997).en_US
dc.identifier.citedreferenceG. Abstreiter, Appl. Surf. Sci. ASUSEE50, 73 (1991).en_US
dc.owningcollnamePhysics, Department of


Files in this item

Show simple item record

Remediation of Harmful Language

The University of Michigan Library aims to describe library materials in a way that respects the people and communities who create, use, and are represented in our collections. Report harmful or offensive language in catalog records, finding aids, or elsewhere in our collections anonymously through our metadata feedback form. More information at Remediation of Harmful Language.

Accessibility

If you are unable to use this file in its current format, please select the Contact Us link and we can modify it to make it more accessible to you.