Electron and hole impact ionization coefficients in GaAs/Al0.45Ga0.55As/Al0.3Ga0.7As coupled well systems
dc.contributor.author | Bhattacharya, Pallab K. | en_US |
dc.contributor.author | Zebda, Yousef | en_US |
dc.contributor.author | Singh, J. | en_US |
dc.date.accessioned | 2010-05-06T23:00:46Z | |
dc.date.available | 2010-05-06T23:00:46Z | |
dc.date.issued | 1991-06-17 | en_US |
dc.identifier.citation | Bhattacharya, P. K.; Zebda, Y.; Singh, J. (1991). "Electron and hole impact ionization coefficients in GaAs/Al0.45Ga0.55As/Al0.3Ga0.7As coupled well systems." Applied Physics Letters 58(24): 2791-2793. <http://hdl.handle.net/2027.42/70978> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/70978 | |
dc.description.abstract | We have measured electron and hole multiplication factors and impact ionization coefficients in 550 Å GaAs/500 Å Al0.3Ga0.7As quantum wells with an intermediate Al0.45Ga0.55As barrier (50 and 100 Å) inserted in the well region. It is seen that while the measured value of α(E) is insensitive to the position of the intermediate barrier in the well, the value of β(E) is very sensitive. The value of α/β varies from less than unity to 5, depending on the position of this barrier. These results suggest that hole confinement and scattering play a major role in making the value of α/β greater than unity in these multilayered structures. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 333385 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Electron and hole impact ionization coefficients in GaAs/Al0.45Ga0.55As/Al0.3Ga0.7As coupled well systems | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Center for High‐Frequency Microelectronics and Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109‐2122 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/70978/2/APPLAB-58-24-2791-1.pdf | |
dc.identifier.doi | 10.1063/1.104763 | en_US |
dc.identifier.source | Applied Physics Letters | en_US |
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dc.identifier.citedreference | G. E. Stillman and C. M. Wolfe, in Semiconductors and Semimetals, edited by R. K. Willardson and A. C. Beer (Academic, New York, 1977), Vol. 12, pp. 291–393. | en_US |
dc.identifier.citedreference | P. K. Bhattacharya, J. Singh, J. Hinckley, F.-Y. Juang, and Y. Zebda, “Dynamics of Carrier Confinement and Scattering in Quantum Wells: A Study of Impact Ionization Phenomena,” presented at the Engineering Foundation Conference on Ballistic Electrons for Transistors, Santa Barbara, March 1987. | en_US |
dc.owningcollname | Physics, Department of |
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