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Electron and hole impact ionization coefficients in GaAs/Al0.45Ga0.55As/Al0.3Ga0.7As coupled well systems
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.contributor.authorZebda, Yousefen_US
dc.contributor.authorSingh, J.en_US
dc.date.accessioned2010-05-06T23:00:46Z
dc.date.available2010-05-06T23:00:46Z
dc.date.issued1991-06-17en_US
dc.identifier.citationBhattacharya, P. K.; Zebda, Y.; Singh, J. (1991). "Electron and hole impact ionization coefficients in GaAs/Al0.45Ga0.55As/Al0.3Ga0.7As coupled well systems." Applied Physics Letters 58(24): 2791-2793. <http://hdl.handle.net/2027.42/70978>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70978
dc.description.abstractWe have measured electron and hole multiplication factors and impact ionization coefficients in 550 Å GaAs/500 Å Al0.3Ga0.7As quantum wells with an intermediate Al0.45Ga0.55As barrier (50 and 100 Å) inserted in the well region. It is seen that while the measured value of α(E) is insensitive to the position of the intermediate barrier in the well, the value of β(E) is very sensitive. The value of α/β varies from less than unity to 5, depending on the position of this barrier. These results suggest that hole confinement and scattering play a major role in making the value of α/β greater than unity in these multilayered structures.en_US
dc.format.extent3102 bytes
dc.format.extent333385 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleElectron and hole impact ionization coefficients in GaAs/Al0.45Ga0.55As/Al0.3Ga0.7As coupled well systemsen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumCenter for High‐Frequency Microelectronics and Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109‐2122en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70978/2/APPLAB-58-24-2791-1.pdf
dc.identifier.doi10.1063/1.104763en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.identifier.citedreferenceG. E. Stillman and C. M. Wolfe, in Semiconductors and Semimetals, edited by R. K. Willardson and A. C. Beer (Academic, New York, 1977), Vol. 12, pp. 291–393.en_US
dc.identifier.citedreferenceP. K. Bhattacharya, J. Singh, J. Hinckley, F.-Y. Juang, and Y. Zebda, “Dynamics of Carrier Confinement and Scattering in Quantum Wells: A Study of Impact Ionization Phenomena,” presented at the Engineering Foundation Conference on Ballistic Electrons for Transistors, Santa Barbara, March 1987.en_US
dc.owningcollnamePhysics, Department of


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