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Monte Carlo studies of two dimensional transport in GaN/AlGaN transistors: Comparison with transport in AlGaAs/GaAs channels

dc.contributor.authorZhang, Yifeien_US
dc.contributor.authorSingh, Jaspriten_US
dc.date.accessioned2010-05-06T23:01:20Z
dc.date.available2010-05-06T23:01:20Z
dc.date.issued2001-01-01en_US
dc.identifier.citationZhang, Yifei; Singh, Jasprit (2001). "Monte Carlo studies of two dimensional transport in GaN/AlGaN transistors: Comparison with transport in AlGaAs/GaAs channels." Journal of Applied Physics 89(1): 386-389. <http://hdl.handle.net/2027.42/70984>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70984
dc.description.abstractIn this communication we report results on Monte Carlo transport studies in GaN/AlGaN two dimensional electron gas. In addition to steady state results we examine transit times in channels of different lengths under various bias conditions. The results are compared to those calculated for the GaAs/AlGaAs device. We find that at low electric fields, transit time in the GaN channel can be considerably longer than the time in a GaAs channel. This is attributed to the overshoot effect in the GaAs channel. However, at large electric field transport the transit times in GaN and GaAs channel are found to be comparable. © 2001 American Institute of Physics.en_US
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dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleMonte Carlo studies of two dimensional transport in GaN/AlGaN transistors: Comparison with transport in AlGaAs/GaAs channelsen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumApplied Physics Program, The University of Michigan at Ann Arbor, Ann Arbor, Michigan 48109-1120en_US
dc.contributor.affiliationumDepartment of Electrical Engineering and Computer Science, The University of Michigan at Ann Arbor, Ann Arbor, Michigan 48109-2122en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70984/2/JAPIAU-89-1-386-1.pdf
dc.identifier.doi10.1063/1.1324998en_US
dc.identifier.sourceJournal of Applied Physicsen_US
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dc.owningcollnamePhysics, Department of


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