View Item 

Show simple item record

Switching speeds in double‐barrier resonant‐tunneling diode structures

dc.contributor.authorMains, R. K.en_US
dc.contributor.authorHaddad, George I.en_US
dc.date.accessioned2010-05-06T23:02:01Z
dc.date.available2010-05-06T23:02:01Z
dc.date.issued1991-12-15en_US
dc.identifier.citationMains, R. K.; Haddad, G. I. (1991). "Switching speeds in double‐barrier resonant‐tunneling diode structures." Journal of Applied Physics 70(12): 7638-7639. <http://hdl.handle.net/2027.42/70991>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70991
dc.description.abstractSwitching speeds are calculated for GaAs‐AlGaAs resonant‐tunneling diode structures with different barrier widths from the time‐dependent Schrödinger equation. The speed is determined by monitoring the device current as the bias voltage is instantaneously switched. Effective mass discontinuities at the barrier and quantum well edges are included. Comparisons with previously published results using the wave packet approach are given. It is found that the turn‐off transient is dominated by the lifetime of the quasibound state; however, care must be used in calculating the lifetime.en_US
dc.format.extent3102 bytes
dc.format.extent239362 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleSwitching speeds in double‐barrier resonant‐tunneling diode structuresen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70991/2/JAPIAU-70-12-7638-1.pdf
dc.identifier.doi10.1063/1.349726en_US
dc.identifier.sourceJournal of Applied Physicsen_US
dc.identifier.citedreferenceW. R. Frensley, Phys. Rev. B 36, 1570 (1987).en_US
dc.identifier.citedreferenceK. L. Jensen and F. A. Buot, J. Appl. Phys. 65, 5248 (1989).en_US
dc.identifier.citedreferenceR. K. Mains and G. I. Haddad, J. Appl. Phys. 64, 3564 (1988).en_US
dc.identifier.citedreferenceR. K. Mains and G. I. Haddad, J. Appl. Phys. 67, 591 (1990).en_US
dc.identifier.citedreferenceH. Guo, K. Diff, G. Neofotistos, and J. D. Gunton, Appl. Phys. Lett. 53, 131 (1988).en_US
dc.identifier.citedreferenceR. K. Mains, I. Mehdi, and G. I. Haddad, Appl. Phys. Lett. 55, 2631 (1989).en_US
dc.identifier.citedreferenceJ.-f. Zhang and B.-y. Gu, Phys. Rev. B 43, 5028 (1991).en_US
dc.owningcollnamePhysics, Department of


Files in this item

Name:
JAPIAU-70-12-7638-1.pdf
Size:
233.7KB
Format:
PDF
View/Open

Show simple item record

Remediation of Harmful Language

The University of Michigan Library aims to describe library materials in a way that respects the people and communities who create, use, and are represented in our collections. Report harmful or offensive language in catalog records, finding aids, or elsewhere in our collections anonymously through our metadata feedback form. More information at Remediation of Harmful Language.

Accessibility

If you are unable to use this file in its current format, please select the Contact Us link and we can modify it to make it more accessible to you.