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Epitaxial growth and surface modeling of ZnO on cc-plane Al2O3Al2O3

dc.contributor.authorMurphy, T. E.en_US
dc.contributor.authorWalavalkar, S.en_US
dc.contributor.authorPhillips, J. D.en_US
dc.date.accessioned2010-05-06T23:02:24Z
dc.date.available2010-05-06T23:02:24Z
dc.date.issued2004-12-27en_US
dc.identifier.citationMurphy, T. E.; Walavalkar, S.; Phillips, J. D. (2004). "Epitaxial growth and surface modeling of ZnO on cc-plane Al2O3Al2O3." Applied Physics Letters 85(26): 6338-6340. <http://hdl.handle.net/2027.42/70995>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70995
dc.description.abstractThe growth of ZnO on cc-plane sapphire by molecular beam epitaxy is presented for varying ratios of zinc and oxygen flux. Reflection high energy electron diffraction patterns during epitaxial growth suggest clear differences in the evolution of surface morphology for differing Zn flux. Atomic force microscope images indicate sizable hexagonal features in the surface morphology for Zn-rich material. A stochastic growth model is presented to represent the experimental ZnO surface, where differences in adatom lateral diffusion length are suspected to be the cause of the differing surface morphology.en_US
dc.format.extent3102 bytes
dc.format.extent223411 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/octet-stream
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleEpitaxial growth and surface modeling of ZnO on cc-plane Al2O3Al2O3en_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70995/2/APPLAB-85-26-6338-1.pdf
dc.identifier.doi10.1063/1.1842357en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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