Epitaxial growth and surface modeling of ZnO on cc-plane Al2O3Al2O3
dc.contributor.author | Murphy, T. E. | en_US |
dc.contributor.author | Walavalkar, S. | en_US |
dc.contributor.author | Phillips, J. D. | en_US |
dc.date.accessioned | 2010-05-06T23:02:24Z | |
dc.date.available | 2010-05-06T23:02:24Z | |
dc.date.issued | 2004-12-27 | en_US |
dc.identifier.citation | Murphy, T. E.; Walavalkar, S.; Phillips, J. D. (2004). "Epitaxial growth and surface modeling of ZnO on cc-plane Al2O3Al2O3." Applied Physics Letters 85(26): 6338-6340. <http://hdl.handle.net/2027.42/70995> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/70995 | |
dc.description.abstract | The growth of ZnO on cc-plane sapphire by molecular beam epitaxy is presented for varying ratios of zinc and oxygen flux. Reflection high energy electron diffraction patterns during epitaxial growth suggest clear differences in the evolution of surface morphology for differing Zn flux. Atomic force microscope images indicate sizable hexagonal features in the surface morphology for Zn-rich material. A stochastic growth model is presented to represent the experimental ZnO surface, where differences in adatom lateral diffusion length are suspected to be the cause of the differing surface morphology. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 223411 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/octet-stream | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Epitaxial growth and surface modeling of ZnO on cc-plane Al2O3Al2O3 | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/70995/2/APPLAB-85-26-6338-1.pdf | |
dc.identifier.doi | 10.1063/1.1842357 | en_US |
dc.identifier.source | Applied Physics Letters | en_US |
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dc.owningcollname | Physics, Department of |
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