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Charge control and mobility studies for an AlGaN/GaN high electron mobility transistor
dc.contributor.authorZhang, Yifeien_US
dc.contributor.authorSingh, Jaspriten_US
dc.date.accessioned2010-05-06T23:02:35Z
dc.date.available2010-05-06T23:02:35Z
dc.date.issued1999-01-01en_US
dc.identifier.citationZhang, Yifei; Singh, Jasprit (1999). "Charge control and mobility studies for an AlGaN/GaN high electron mobility transistor." Journal of Applied Physics 85(1): 587-594. <http://hdl.handle.net/2027.42/70997>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/70997
dc.description.abstractA charge control model and a mobility model are developed for the Al–GaN/GaN high electron mobility transistor (HEMT) device. The model addresses issues of how piezoelectric effect and interface roughness influence device properties. We find that even small amount of interface roughness has very strong effect on the two-dimensional electron gas properties. Low-lying electronic states are strongly localized and transport through these states is not described by Born approximation but by phonon-assisted hopping. At low temperature the effects of localization are quite important and we use the Kubo formula to study this transport. Results for charge control and mobility are presented as a function of Al composition in the AlGaN/GaN HEMT. © 1999 American Institute of Physics.en_US
dc.format.extent3102 bytes
dc.format.extent181664 bytes
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dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleCharge control and mobility studies for an AlGaN/GaN high electron mobility transistoren_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumApplied Physics Program, The University of Michigan at Ann Arbor, Ann Arbor, Michigan 48109-1120en_US
dc.contributor.affiliationumDepartment of Electrical Engineering and Computer Science, The University of Michigan at Ann Arbor, Ann Arbor, Michigan 48109-2122en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/70997/2/JAPIAU-85-1-587-1.pdf
dc.identifier.doi10.1063/1.369493en_US
dc.identifier.sourceJournal of Applied Physicsen_US
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dc.owningcollnamePhysics, Department of


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