Photoluminescence characterization of single heterojunction quantum well structures
dc.contributor.author | Aina, O. | en_US |
dc.contributor.author | Mattingly, M. | en_US |
dc.contributor.author | Juan, F. Y. | en_US |
dc.contributor.author | Bhattacharya, Pallab K. | en_US |
dc.date.accessioned | 2010-05-06T23:03:32Z | |
dc.date.available | 2010-05-06T23:03:32Z | |
dc.date.issued | 1987-01-05 | en_US |
dc.identifier.citation | Aina, O.; Mattingly, M.; Juan, F. Y.; Bhattacharya, P. K. (1987). "Photoluminescence characterization of single heterojunction quantum well structures." Applied Physics Letters 50(1): 43-45. <http://hdl.handle.net/2027.42/71007> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/71007 | |
dc.description.abstract | A photoluminescence emission band at 830 nm has been detected in single heterojunction quantum well structures (modulation‐doped structures) in the range of 250–400 K. This emission band is observed neither in heterojunction structures without a two‐dimensional electron gas (2DEG), nor in n+ AlGaAs and GaAs. The intensity of the emission band increases as the mobility of the samples with 2DEG and shows excitonic behavior in its variation with incident laser excitation intensity. This photoluminescence emission was observed in samples grown by both molecular beam epitaxy and by organometallic vapor phase epitaxy. This effect may be useful as a rough identification of high quality, modulation‐doped heterostructures. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 356738 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Photoluminescence characterization of single heterojunction quantum well structures | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Sciences, University of Michigan, Ann Arbor, Michigan 48109 | en_US |
dc.contributor.affiliationother | Bendix Aerospace Technology Center, Allied Corporation, 9140 Old Annapolis Road, Columbia, Maryland 21045 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/71007/2/APPLAB-50-1-43-1.pdf | |
dc.identifier.doi | 10.1063/1.98121 | en_US |
dc.identifier.source | Applied Physics Letters | en_US |
dc.identifier.citedreference | R. Dingle, W. Wiegmann, and C. H. Henry, Phys. Rev. Lett. 33, 827 (1974). | en_US |
dc.identifier.citedreference | S. Hiyamizu, J. Saito, K. Nambu, and T. Ishitawa, Jpn. J. Appl. Phys. 22, L609 (1983). | en_US |
dc.identifier.citedreference | L. L. Chang, K. Esaki, C. A. Chang, and L. Esaki, Phys. Rev. Lett. 38, 1489 (1977). | en_US |
dc.identifier.citedreference | K. Lee, M. S. Shur, T. J. Drummond, and H. Morkoç, IEEE Trans. Electron Devices ED‐30, 207 (1983). | en_US |
dc.identifier.citedreference | P. M. Frijlink and J. Maluenda, Jpn. J. Appl. Phys. 21, L574 (1982). | en_US |
dc.identifier.citedreference | F. Y. Juang, Y. Nashimoto, and P. Bhattacharya, J. Appl. Phys. 58, 1986 (1986). | en_US |
dc.identifier.citedreference | S. Dhar, W. P. Hong, P. K. Bhattacharya, Y. Nashimoto, and F. Y. Juang, IEEE Trans. Electron Devices ED‐33, 698 (1986). | en_US |
dc.identifier.citedreference | C. Hamaguchi, K. Miyatsuji, and H. Hihara, Jpn. J. Appl. Phys. 23, L132 (1984). | en_US |
dc.owningcollname | Physics, Department of |
Files in this item
Remediation of Harmful Language
The University of Michigan Library aims to describe library materials in a way that respects the people and communities who create, use, and are represented in our collections. Report harmful or offensive language in catalog records, finding aids, or elsewhere in our collections anonymously through our metadata feedback form. More information at Remediation of Harmful Language.
Accessibility
If you are unable to use this file in its current format, please select the Contact Us link and we can modify it to make it more accessible to you.