Show simple item record

Photoluminescence characterization of single heterojunction quantum well structures

dc.contributor.authorAina, O.en_US
dc.contributor.authorMattingly, M.en_US
dc.contributor.authorJuan, F. Y.en_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.date.accessioned2010-05-06T23:03:32Z
dc.date.available2010-05-06T23:03:32Z
dc.date.issued1987-01-05en_US
dc.identifier.citationAina, O.; Mattingly, M.; Juan, F. Y.; Bhattacharya, P. K. (1987). "Photoluminescence characterization of single heterojunction quantum well structures." Applied Physics Letters 50(1): 43-45. <http://hdl.handle.net/2027.42/71007>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/71007
dc.description.abstractA photoluminescence emission band at 830 nm has been detected in single heterojunction quantum well structures (modulation‐doped structures) in the range of 250–400 K. This emission band is observed neither in heterojunction structures without a two‐dimensional electron gas (2DEG), nor in n+ AlGaAs and GaAs. The intensity of the emission band increases as the mobility of the samples with 2DEG and shows excitonic behavior in its variation with incident laser excitation intensity. This photoluminescence emission was observed in samples grown by both molecular beam epitaxy and by organometallic vapor phase epitaxy. This effect may be useful as a rough identification of high quality, modulation‐doped heterostructures.en_US
dc.format.extent3102 bytes
dc.format.extent356738 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titlePhotoluminescence characterization of single heterojunction quantum well structuresen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumSolid State Electronics Laboratory, Department of Electrical Engineering and Computer Sciences, University of Michigan, Ann Arbor, Michigan 48109en_US
dc.contributor.affiliationotherBendix Aerospace Technology Center, Allied Corporation, 9140 Old Annapolis Road, Columbia, Maryland 21045en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/71007/2/APPLAB-50-1-43-1.pdf
dc.identifier.doi10.1063/1.98121en_US
dc.identifier.sourceApplied Physics Lettersen_US
dc.identifier.citedreferenceR. Dingle, W. Wiegmann, and C. H. Henry, Phys. Rev. Lett. 33, 827 (1974).en_US
dc.identifier.citedreferenceS. Hiyamizu, J. Saito, K. Nambu, and T. Ishitawa, Jpn. J. Appl. Phys. 22, L609 (1983).en_US
dc.identifier.citedreferenceL. L. Chang, K. Esaki, C. A. Chang, and L. Esaki, Phys. Rev. Lett. 38, 1489 (1977).en_US
dc.identifier.citedreferenceK. Lee, M. S. Shur, T. J. Drummond, and H. Morkoç, IEEE Trans. Electron Devices ED‐30, 207 (1983).en_US
dc.identifier.citedreferenceP. M. Frijlink and J. Maluenda, Jpn. J. Appl. Phys. 21, L574 (1982).en_US
dc.identifier.citedreferenceF. Y. Juang, Y. Nashimoto, and P. Bhattacharya, J. Appl. Phys. 58, 1986 (1986).en_US
dc.identifier.citedreferenceS. Dhar, W. P. Hong, P. K. Bhattacharya, Y. Nashimoto, and F. Y. Juang, IEEE Trans. Electron Devices ED‐33, 698 (1986).en_US
dc.identifier.citedreferenceC. Hamaguchi, K. Miyatsuji, and H. Hihara, Jpn. J. Appl. Phys. 23, L132 (1984).en_US
dc.owningcollnamePhysics, Department of


Files in this item

Show simple item record

Remediation of Harmful Language

The University of Michigan Library aims to describe library materials in a way that respects the people and communities who create, use, and are represented in our collections. Report harmful or offensive language in catalog records, finding aids, or elsewhere in our collections anonymously through our metadata feedback form. More information at Remediation of Harmful Language.

Accessibility

If you are unable to use this file in its current format, please select the Contact Us link and we can modify it to make it more accessible to you.