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Electrical resistance and the time‐dependent oxidation of semicontinuous bismuth films

dc.contributor.authorCohn, J. L.en_US
dc.contributor.authorUher, Ctiraden_US
dc.date.accessioned2010-05-06T23:04:24Z
dc.date.available2010-05-06T23:04:24Z
dc.date.issued1989-09-01en_US
dc.identifier.citationCohn, J. L.; Uher, C. (1989). "Electrical resistance and the time‐dependent oxidation of semicontinuous bismuth films." Journal of Applied Physics 66(5): 2045-2048. <http://hdl.handle.net/2027.42/71016>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/71016
dc.description.abstractWe report on the electrical resistance and time‐dependent oxidation of thin (≲90 Å) semicontinuous bismuth films. An increase in the room temperature sheet resistance with exposure to air is correlated with the growth of insulating Bi2O3 at the surfaces and internal boundaries between bismuth particles. For short oxidation times t, the resistance increases as R☒ ∝t1/2, consistent with a parabolic oxide growth law. At longer times the resistance follows the classical percolation law R☒∝‖tc−t‖−μ, where tc is a critical exposure time and μ≂1.3 is a critical exponent for two‐dimensional systems.en_US
dc.format.extent3102 bytes
dc.format.extent928078 bytes
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dc.format.mimetypeapplication/octet-stream
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleElectrical resistance and the time‐dependent oxidation of semicontinuous bismuth filmsen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumPhysics Department, University of Michigan, Ann Arbor, Michigan 48109en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/71016/2/JAPIAU-66-5-2045-1.pdf
dc.identifier.doi10.1063/1.344344en_US
dc.identifier.sourceJournal of Applied Physicsen_US
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dc.owningcollnamePhysics, Department of


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