View Item 

Show simple item record

Evaluation of the fundamental properties of quantum dot infrared detectors
dc.contributor.authorPhillips, Jamieen_US
dc.date.accessioned2010-05-06T23:06:39Z
dc.date.available2010-05-06T23:06:39Z
dc.date.issued2002-04-01en_US
dc.identifier.citationPhillips, Jamie (2002). "Evaluation of the fundamental properties of quantum dot infrared detectors." Journal of Applied Physics 91(7): 4590-4594. <http://hdl.handle.net/2027.42/71040>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/71040
dc.description.abstractThe physical properties of detectors based on intraband optical absorption in quantum dots is described and examined in the interest of providing a competitive alternative infrared (IR) detector technology. These quantum dot detectors are an extension of quantum well infrared photodetectors and are expected to have a large performance advantage. A model is developed for quantum dot infrared photodetectors based on fundamental performance limitations enabling a direct comparison between IR materials technologies. A comparison is made among HgCdTe, quantum well, and quantum dot IR detectors, where quantum dots are expected to have the potential to outperform quantum wells by several orders of magnitude and compete with HgCdTe. In this analysis, quantum dots are expected to possess the fundamental ability to achieve the highest IR detector performance if quantum dot arrays with high size uniformity and optimal bandstructure may be achieved. © 2002 American Institute of Physics.en_US
dc.format.extent3102 bytes
dc.format.extent128764 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleEvaluation of the fundamental properties of quantum dot infrared detectorsen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Electrical Engineering and Computer Science, Solid State Electronics Laboratory, The University of Michigan, Ann Arbor, Michigan 48109-2122en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/71040/2/JAPIAU-91-7-4590-1.pdf
dc.identifier.doi10.1063/1.1455130en_US
dc.identifier.sourceJournal of Applied Physicsen_US
dc.identifier.citedreferenceP. R. Norton, Proc. SPIE PSISDG3379, 102 (1998).en_US
dc.identifier.citedreferenceJ. Bajaj, Proc. SPIE PSISDG3948, 42 (2000).en_US
dc.identifier.citedreferenceM. B. Reine, Proc. SPIE PSISDG4028, 320 (2000).en_US
dc.identifier.citedreferenceI. M. Baker and C. D. Maxey, J. Electron. Mater. JECMA530, 682 (2001).en_US
dc.identifier.citedreferenceJ. B. Varesi et al., J. Electron. Mater. JECMA530, 566 (2001).en_US
dc.identifier.citedreferenceF. Fuchs, U. Weimar, E. Ahlswede, W. Pletschen, J. Schmitz, and M. Walther, Proc. SPIE PSISDG3287, 14 (1998).en_US
dc.identifier.citedreferenceM. H. Young, D. H. Chow, A. T. Hunter, and R. H. Miles, Appl. Surf. Sci. ASUSEE123/124, 395 (1998).en_US
dc.identifier.citedreferenceH. Mohseni, M. Razeghi, G. J. Brown, and Y. S. Park, Appl. Phys. Lett. APPLAB78, 2107 (2001).en_US
dc.identifier.citedreferenceS. D. Gunapala and K. Bandara, Thin Solid Films THSFAP21, 113 (1995), and references therein.en_US
dc.identifier.citedreferenceS. D. Gunapala, S. V. Bandara, J. K. Liu, W. Hong, M. Sundaram, R. Carralejo, C. A. Chott, P. D. Maker, and R. E. Miller, Proc. SPIE PSISDG3061, 722 (1997).en_US
dc.identifier.citedreferenceD. Pan, E. Towe, and S. Kennerly, Electron. Lett. ELLEAK34, 1019 (1998).en_US
dc.identifier.citedreferenceJ. Phillips, K. Kamath, and P. Bhattacharya, Appl. Phys. Lett. APPLAB72, 2020 (1998).en_US
dc.identifier.citedreferenceS. Kim, H. Mohseni, M. Erdtmann, E. Michel, C. Jelen, and M. Razeghi, Appl. Phys. Lett. APPLAB73, 963 (1998).en_US
dc.identifier.citedreferenceQ. D. Zhuang, J. M. Li, H. X. Li, Y. P. Zeng, L. Pan, Y. H. Chen, and M. Y. Kong, Appl. Phys. Lett. APPLAB73, 3706 (1998).en_US
dc.identifier.citedreferenceS. W. Lee, K. Hirakawa, and Y. Shimada, Appl. Phys. Lett. APPLAB75, 1428 (1999).en_US
dc.identifier.citedreferenceJ. Phillips, P. Bhattacharya, S. W. Kennerly, D. W. Beekman, and M. Dutta, IEEE J. Quantum Electron. IEJQA735, 936 (1999).en_US
dc.identifier.citedreferenceH. C. Liu, M. Gao, J. McCaffrey, Z. R. Wasilewski, and S. Fafard, Appl. Phys. Lett. APPLAB78, 79 (2001).en_US
dc.identifier.citedreferenceD. Leonard, M. Krishnamurthy, C. M. Reaves, S. P. Denbaars, and P. M. Petroff, Appl. Phys. Lett. APPLAB63, 3203 (1993).en_US
dc.identifier.citedreferenceP. R. Berger, K. Chang, P. Bhattacharya, J. Singh, and K. K. Bajaj, Appl. Phys. Lett. APPLAB53, 684 (1988).en_US
dc.identifier.citedreferenceH. Saito, K. Nishi, I. Ogura, S. Sugou, and Y. Sugimoto, Appl. Phys. Lett. APPLAB69, 3140 (1996).en_US
dc.identifier.citedreferenceM. A. Kinch, J. Electron. Mater. JECMA529, 809 (2000).en_US
dc.identifier.citedreferenceB. F. Levine, C. G. Bethea, G. Hasnain, J. Walker, and R. J. Malik, Appl. Phys. Lett. APPLAB53, 296 (1988).en_US
dc.identifier.citedreferenceH. Jiang and J. Singh, IEEE J. Quantum Electron. IEJQA734, 1188 (1998).en_US
dc.identifier.citedreferenceS. Li and J. Xia, Phys. Rev. B PRBMDO55, 15434 (1997).en_US
dc.identifier.citedreferenceP. N. Brounkov, A. Polimeni, S. T. Stoddart, M. Henini, L. Eaves, P. C. Main, A. R. Kovsh, Yu. G. Musikhin, and S. G. Konnikov, Appl. Phys. Lett. APPLAB73, 1092 (1998).en_US
dc.identifier.citedreferenceD. Klotzkin, K. Kamath, and P. Bhattacharya, IEEE Photonics Technol. Lett. IPTLEL9, 1301 (1997).en_US
dc.identifier.citedreferenceI. Vurgaftman, Y. Lam, and J. Singh, Phys. Rev. B PRBMDO50, 14309 (1994).en_US
dc.identifier.citedreferenceS. Krishna, J. Sabarinathan, K. Linder, P. Bhattacharya, B. Lita, and R. S. Goldman, J. Vac. Sci. Technol. B JVTBD918, 1502 (2000).en_US
dc.identifier.citedreferenceV. Ryzhii, Semicond. Sci. Technol. SSTEET11, 759 (1996).en_US
dc.owningcollnamePhysics, Department of


Files in this item

Name:
JAPIAU-91-7-4590-1.pdf
Size:
125.7KB
Format:
PDF
View/Open

Show simple item record

Remediation of Harmful Language

The University of Michigan Library aims to describe library materials in a way that respects the people and communities who create, use, and are represented in our collections. Report harmful or offensive language in catalog records, finding aids, or elsewhere in our collections anonymously through our metadata feedback form. More information at Remediation of Harmful Language.

Accessibility

If you are unable to use this file in its current format, please select the Contact Us link and we can modify it to make it more accessible to you.