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Analytic Expressions Relating Surface Charge and Potential Profiles in the Space‐Charge Region in Semiconductors
dc.contributor.authorLee, Vin‐Jangen_US
dc.contributor.authorMason, Donald R.en_US
dc.date.accessioned2010-05-06T23:07:53Z
dc.date.available2010-05-06T23:07:53Z
dc.date.issued1963-09en_US
dc.identifier.citationLee, Vin‐Jang; Mason, Donald R. (1963). "Analytic Expressions Relating Surface Charge and Potential Profiles in the Space‐Charge Region in Semiconductors." Journal of Applied Physics 34(9): 2660-2667. <http://hdl.handle.net/2027.42/71053>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/71053
dc.description.abstractThe potential on the surface of a semiconductor is formulated analytically as a function of surface charge concentration by a double integration of Poisson's equation in one‐dimensional form. All combinations of the types of semiconductors and surface charge have been considered, as they produce accumulation, depletion, or inversion layers. The variation of diffusion potential as a function of distance from the surface towards the interior of the semiconductor is also discussed.en_US
dc.format.extent3102 bytes
dc.format.extent733066 bytes
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dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleAnalytic Expressions Relating Surface Charge and Potential Profiles in the Space‐Charge Region in Semiconductorsen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Chemical and Metallurgical Engineering, University of Michigan, Ann Arbor, Michiganen_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/71053/2/JAPIAU-34-9-2660-1.pdf
dc.identifier.doi10.1063/1.1729787en_US
dc.identifier.sourceJournal of Applied Physicsen_US
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dc.owningcollnamePhysics, Department of


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