Pseudomorphic InGaAs base ballistic hot‐electron device

Seo, K.; Heiblum, M.; Knoedler, C. M.; Hong, W. P.; Bhattacharya, Pallab K.

Pseudomorphic InGaAs base ballistic hot‐electron device

dc.contributor.author	Seo, K.	en_US
dc.contributor.author	Heiblum, M.	en_US
dc.contributor.author	Knoedler, C. M.	en_US
dc.contributor.author	Hong, W. P.	en_US
dc.contributor.author	Bhattacharya, Pallab K.	en_US
dc.date.accessioned	2010-05-06T23:10:08Z
dc.date.available	2010-05-06T23:10:08Z
dc.date.issued	1988-11-14	en_US
dc.identifier.citation	Seo, K.; Heiblum, M.; Knoedler, C. M.; Hong, W‐P.; Bhattacharya, P. (1988). "Pseudomorphic InGaAs base ballistic hot‐electron device." Applied Physics Letters 53(20): 1946-1948. <http://hdl.handle.net/2027.42/71077>	en_US
dc.identifier.uri	https://hdl.handle.net/2027.42/71077
dc.description.abstract	We report the first successful incorporation of a pseudomorphic InGaAs base in a ballistic hot‐electron device. The device, with a 28‐nm‐thick In0.15Ga0.85As base, had a collector‐base breakdown voltage of 0.55 V and a maximum current transfer ratio of 0.89 at 4.2 K, considerably higher than the 0.75 in a comparable GaAs‐base device. Electron energy spectroscopy measurements revealed that at least 30% of the injected electrons traversed the InGaAs base ballistically, causing a strong modulation in the injected currents into the quantized base. The Γ‐L valley separation in the strained In0.15Ga0.85As was estimated to be about 410 meV.	en_US
dc.format.extent	3102 bytes
dc.format.extent	300873 bytes
dc.format.mimetype	text/plain
dc.format.mimetype	application/pdf
dc.publisher	The American Institute of Physics	en_US
dc.rights	© The American Institute of Physics	en_US
dc.title	Pseudomorphic InGaAs base ballistic hot‐electron device	en_US
dc.type	Article	en_US
dc.subject.hlbsecondlevel	Physics	en_US
dc.subject.hlbtoplevel	Science	en_US
dc.description.peerreviewed	Peer Reviewed	en_US
dc.contributor.affiliationum	Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109	en_US
dc.contributor.affiliationother	IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598	en_US
dc.description.bitstreamurl	http://deepblue.lib.umich.edu/bitstream/2027.42/71077/2/APPLAB-53-20-1946-1.pdf
dc.identifier.doi	10.1063/1.100331	en_US
dc.identifier.source	Applied Physics Letters	en_US
dc.identifier.citedreference	M. Hciblum, I. M. Anderson, and C. M. Knocdler, Appl. Phys. Lett. 49, 207 (1986).	en_US
dc.identifier.citedreference	M. Heiblum, M. I. Nathan, D. C. Thomas, and C. M. Knoedler, Phys. Rev. Lett. 55, 2200 (1985).	en_US
dc.identifier.citedreference	M. Heiblum, E. Calleja, I. M. Anderson, W. P. Dumke, C. M. Knocdler, and L. Osterling, Phys. Rev. Lett. 56, 2854 (1986).	en_US
dc.identifier.citedreference	T. W. Hickmott, P. M. Solomon, R. Fisher, and K. Morkoç, J. Appl. Phys. 57, 2844 (1985).	en_US
dc.identifier.citedreference	K. Inoue, H. Sakaki, J. Yoshino, and Y. Yoshioka, Appl. Phys. Lett. 46, 973 (1985).	en_US
dc.identifier.citedreference	M. Heiblum and M. V. Fischetti, “Ballistic Electron Transport in Hot Electron Transistors,” to appear in Physics of Quantum Electron Devices, edited by F. Capasso, in Topics in Current Physics (Springer, Berlin, 1988).	en_US
dc.identifier.citedreference	The conduction‐band nonparabolicity is accounted for via E(k) = (ℏ2k2/2m∗)(1−αℏ2k2/2m∗),E(k)=(ℏ2k2∕2m∗)(1−αℏ2k2∕2m∗), where E(k)E(k) is the kinetic energy in the Γ Band and α is the nonparabolicity parameter. The value for α in In0.15Ga0.85AsIn0.15Ga0.85As was approximated from a linear interpolation between α = 0.55 eV−1α=0.55eV−1 in GaAs and α = 1.167 eV−1α=1.167eV−1 in In0.53Ga0.47As.In0.53Ga0.47As.	en_US
dc.identifier.citedreference	M. Heiblum, M. V. Fischetti, W. P. Dumke, D. J. Frank, I. M. Anderson, C. M. Knoedler, and L. Osterling, Phys. Rev. Lett. 58, 816 (1987).	en_US
dc.owningcollname	Physics, Department of

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