Temperature-dependent carrier dynamics in self-assembled InGaAs quantum dots
dc.contributor.author | Urayama, J. | en_US |
dc.contributor.author | Norris, Theodore B. | en_US |
dc.contributor.author | Jiang, Hongtao | en_US |
dc.contributor.author | Singh, J. | en_US |
dc.contributor.author | Bhattacharya, Pallab K. | en_US |
dc.date.accessioned | 2010-05-06T23:11:11Z | |
dc.date.available | 2010-05-06T23:11:11Z | |
dc.date.issued | 2002-03-25 | en_US |
dc.identifier.citation | Urayama, J.; Norris, T. B.; Jiang, H.; Singh, J.; Bhattacharya, P. (2002). "Temperature-dependent carrier dynamics in self-assembled InGaAs quantum dots." Applied Physics Letters 80(12): 2162-2164. <http://hdl.handle.net/2027.42/71088> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/71088 | |
dc.description.abstract | We measured the transient temperature-dependent carrier population in the confined states of self-assembled In0.4Ga0.6AsIn0.4Ga0.6As quantum dots as well as those of the surrounding wetting layer and barrier region using differential transmission spectroscopy. Results show directly that thermal reemission and nonradiative recombination contribute significantly to the dynamics above 100 K. We offer results of an ensemble Monte Carlo simulation to explain the contribution of these thermally activated processes. © 2002 American Institute of Physics. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 45829 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Temperature-dependent carrier dynamics in self-assembled InGaAs quantum dots | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Center for Ultrafast Optical Science and Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2099 | en_US |
dc.contributor.affiliationum | Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2122 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/71088/2/APPLAB-80-12-2162-1.pdf | |
dc.identifier.doi | 10.1063/1.1462860 | en_US |
dc.identifier.source | Applied Physics Letters | en_US |
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dc.owningcollname | Physics, Department of |
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