Temperature-dependent carrier dynamics in self-assembled InGaAs quantum dots

Urayama, J.; Norris, Theodore B.; Jiang, Hongtao; Singh, J.; Bhattacharya, Pallab K.

Temperature-dependent carrier dynamics in self-assembled InGaAs quantum dots

dc.contributor.author	Urayama, J.	en_US
dc.contributor.author	Norris, Theodore B.	en_US
dc.contributor.author	Jiang, Hongtao	en_US
dc.contributor.author	Singh, J.	en_US
dc.contributor.author	Bhattacharya, Pallab K.	en_US
dc.date.accessioned	2010-05-06T23:11:11Z
dc.date.available	2010-05-06T23:11:11Z
dc.date.issued	2002-03-25	en_US
dc.identifier.citation	Urayama, J.; Norris, T. B.; Jiang, H.; Singh, J.; Bhattacharya, P. (2002). "Temperature-dependent carrier dynamics in self-assembled InGaAs quantum dots." Applied Physics Letters 80(12): 2162-2164. <http://hdl.handle.net/2027.42/71088>	en_US
dc.identifier.uri	https://hdl.handle.net/2027.42/71088
dc.description.abstract	We measured the transient temperature-dependent carrier population in the confined states of self-assembled In0.4Ga0.6AsIn0.4Ga0.6As quantum dots as well as those of the surrounding wetting layer and barrier region using differential transmission spectroscopy. Results show directly that thermal reemission and nonradiative recombination contribute significantly to the dynamics above 100 K. We offer results of an ensemble Monte Carlo simulation to explain the contribution of these thermally activated processes. © 2002 American Institute of Physics.	en_US
dc.format.extent	3102 bytes
dc.format.extent	45829 bytes
dc.format.mimetype	text/plain
dc.format.mimetype	application/pdf
dc.publisher	The American Institute of Physics	en_US
dc.rights	© The American Institute of Physics	en_US
dc.title	Temperature-dependent carrier dynamics in self-assembled InGaAs quantum dots	en_US
dc.type	Article	en_US
dc.subject.hlbsecondlevel	Physics	en_US
dc.subject.hlbtoplevel	Science	en_US
dc.description.peerreviewed	Peer Reviewed	en_US
dc.contributor.affiliationum	Center for Ultrafast Optical Science and Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2099	en_US
dc.contributor.affiliationum	Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2122	en_US
dc.description.bitstreamurl	http://deepblue.lib.umich.edu/bitstream/2027.42/71088/2/APPLAB-80-12-2162-1.pdf
dc.identifier.doi	10.1063/1.1462860	en_US
dc.identifier.source	Applied Physics Letters	en_US
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dc.owningcollname	Physics, Department of

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