Multilayer film stability
dc.contributor.author | Sridhar, Narayanaswamy | en_US |
dc.contributor.author | Rickman, J. M. | en_US |
dc.contributor.author | Srolovitz, David J. | en_US |
dc.date.accessioned | 2010-05-06T23:13:27Z | |
dc.date.available | 2010-05-06T23:13:27Z | |
dc.date.issued | 1997-11-15 | en_US |
dc.identifier.citation | Sridhar, N.; Rickman, J. M.; Srolovitz, D. J. (1997). "Multilayer film stability." Journal of Applied Physics 82(10): 4852-4859. <http://hdl.handle.net/2027.42/71112> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/71112 | |
dc.description.abstract | We apply a linear stability analysis to examine the effect of misfit stress on the interface diffusion controlled morphological stability of multilayer microstructures. The stresses could be the result of misfit strains between the individual film layers and/or between film and substrate. We find that misfit between the layers in the film can destabilize the multilayer structure in cases where the thinner layer is elastically stiffer than the thicker layer. The rate at which these instabilities develop increase with increasing misfit and decreasing interfacial energy. Even when there is no misfit between layers, the misfit between the multilayer film and substrate can destabilize the interfaces. This type of instability occurs whether the thinner layers are stiffer or more compliant than the thicker ones. By appropriate choice of the elastic moduli mismatch between layers and relative layer thicknesses, the presence of an interlayer misfit can suppress the instability caused by the substrate misfit. We present stability diagrams that can be used to design stable, multilayer films using all of the degrees of freedom commonly available in multilayer film deposition. © 1997 American Institute of Physics. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 210512 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Multilayer film stability | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 | en_US |
dc.contributor.affiliationum | Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 | en_US |
dc.contributor.affiliationother | Department of Materials Science and Engineering, Lehigh University, Bethlehem, Pennsylvania 18015 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/71112/2/JAPIAU-82-10-4852-1.pdf | |
dc.identifier.doi | 10.1063/1.366347 | en_US |
dc.identifier.source | Journal of Applied Physics | en_US |
dc.identifier.citedreference | W. Weisbusch and B. Vinter, Quantum Semiconductor Structures: Fundamentals and Applications (Academic, New York, 1991). | en_US |
dc.identifier.citedreference | S. T. Chou, K. Y. Cheng, L. J. Chou, and K. C. Hsieh, J. Appl. Phys. JAPIAU78, 6270 (1995). | en_US |
dc.identifier.citedreference | Y. Arakawa and H. Sakaki, Appl. Phys. Lett. APPLAB40, 939 (1982). | en_US |
dc.identifier.citedreference | E. P. O’Reilly and A. R. Adams, IEEE J. Quantum Electron. IEJQA730, 366 (1994). | en_US |
dc.identifier.citedreference | L. B. DaSilva, T. W. Barbee, Jr., and R. Cauble, Appl. Opt. APOPAI34, 6389 (1995). | en_US |
dc.identifier.citedreference | D. J. Srolovitz, S. M. Yalisove, and J. C. Bilello, Metall. Trans. A MTTABN26, 1805 (1995). | en_US |
dc.identifier.citedreference | J. M. Millunchick, T. D. Twesten, D. M. Follenstaedt, S. R. Lee, E. D. Jones, Y. Zhang, S. P. Ahrenkiel, and A. Mascarenhas, Appl. Phys. Lett. APPLAB70, 1402 (1997). | en_US |
dc.identifier.citedreference | A. G. Cullis, D. J. Robbins, A. J. Pidduck, and P. W. Smith, J. Cryst. Growth JCRGAE123, 333 (1992). | en_US |
dc.identifier.citedreference | A. Ponchet, A. Rocher, J. Y. Emery, C. Starck, and L. Goldstein, J. Appl. Phys. JAPIAU77, 1977 (1995). | en_US |
dc.identifier.citedreference | R. J. Asaro and W. A. Tiller, Metall. Trans. 3, 1789 (1972). | en_US |
dc.identifier.citedreference | M. A. Grinfeld, Sov. Phys. Dokl. SPHDA931, 831 (1986). | en_US |
dc.identifier.citedreference | D. J. Srolovitz, Acta Metall. Mater. AMATEB37, 621 (1989). | en_US |
dc.identifier.citedreference | D. J. Eaglesham and M. Cerullo, Phys. Rev. Lett. PRLTAO64, 1943 (1990). | en_US |
dc.identifier.citedreference | W. H. Yang and D. J. Srolovitz, J. Mech. Phys. Solids JMPSA842, 1551 (1994). | en_US |
dc.identifier.citedreference | D. E. Jesson, S. J. Pennycook, J. M. Baribeau, and D. C. Houghton, Phys. Rev. Lett. PRLTAO71, 1744 (1993). | en_US |
dc.identifier.citedreference | N. Sridhar, J. M. Rickman, and D. J. Srolovitz, Acta Mater. ACMAFD45, 2715 (1997). | en_US |
dc.identifier.citedreference | S. Socrate and D. M. Parks, Acta Metall. Mater. AMATEB41, 2185 (1992). | en_US |
dc.identifier.citedreference | J. D. Eshelby, in Inelastic Behavior of Solids, edited by M. F. Kanninen et al. (McGraw-Hill, New York, 1970), pp. 77–175. | en_US |
dc.identifier.citedreference | W. W. Mullins, J. Appl. Phys. JAPIAU30, 77 (1959). | en_US |
dc.owningcollname | Physics, Department of |
Files in this item
Remediation of Harmful Language
The University of Michigan Library aims to describe library materials in a way that respects the people and communities who create, use, and are represented in our collections. Report harmful or offensive language in catalog records, finding aids, or elsewhere in our collections anonymously through our metadata feedback form. More information at Remediation of Harmful Language.
Accessibility
If you are unable to use this file in its current format, please select the Contact Us link and we can modify it to make it more accessible to you.