Study of charge control and gate tunneling in a ferroelectric-oxide-silicon field effect transistor: Comparison with a conventional metal-oxide-silicon structure
dc.contributor.author | Lin, Yih-Yin | en_US |
dc.contributor.author | Zhang, Yifei | en_US |
dc.contributor.author | Singh, Jasprit | en_US |
dc.contributor.author | York, Robert | en_US |
dc.contributor.author | Mishra, Umesh K. | en_US |
dc.date.accessioned | 2010-05-06T23:13:56Z | |
dc.date.available | 2010-05-06T23:13:56Z | |
dc.date.issued | 2001-02-01 | en_US |
dc.identifier.citation | Lin, Yih-Yin; Zhang, Yifei; Singh, Jasprit; York, Robert; Mishra, Umesh (2001). "Study of charge control and gate tunneling in a ferroelectric-oxide-silicon field effect transistor: Comparison with a conventional metal-oxide-silicon structure." Journal of Applied Physics 89(3): 1856-1860. <http://hdl.handle.net/2027.42/71117> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/71117 | |
dc.description.abstract | It is known that conventional metal-oxide-silicon (MOS) devices will have gate tunneling related problems at very thin oxide thicknesses. Various high-dielectric-constant materials are being examined to suppress the gate currents. In this article we present theoretical results of a charge control and gate tunneling model for a ferroelectric-oxide-silicon field effect transistor and compare them to results for a conventional MOS device. The potential of high polarization charge to induce inversion without doping and high dielectric constant to suppress tunneling current is explored. The model is based on a self-consistent solution of the quantum problem and includes the ferroelectric hysteresis response self-consistently. We show that the polarization charge associated with ferroelectrics can allow greater controllability of the inversion layer charge density. Also the high dielectric constant of ferroelectrics results in greatly suppressed gate current. © 2001 American Institute of Physics. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 90291 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Study of charge control and gate tunneling in a ferroelectric-oxide-silicon field effect transistor: Comparison with a conventional metal-oxide-silicon structure | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 | en_US |
dc.contributor.affiliationum | Applied Physics Program, University of Michigan, Ann Arbor, Michigan 48109-2122 | en_US |
dc.contributor.affiliationum | Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 | en_US |
dc.contributor.affiliationother | Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106-9560 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/71117/2/JAPIAU-89-3-1856-1.pdf | |
dc.identifier.doi | 10.1063/1.1332425 | en_US |
dc.identifier.source | Journal of Applied Physics | en_US |
dc.identifier.citedreference | Y. Taur and T. Ning, Fundamentals of Modern VLSI Devices (Cambridge University Press, Cambridge, 1998), p. 200. | en_US |
dc.identifier.citedreference | Y. Zhang and J. Singh, J. Appl. Phys. JAPIAU85, 587 (1999). | en_US |
dc.identifier.citedreference | Y. Zhang, I. P. Smorchkova, C. R. Elsass, S. Keller, J. P. Ibbetson, S. Denbaars, U. K. Mishra, and J. Singh, J. Appl. Phys. JAPIAU87, 7981 (2000). | en_US |
dc.identifier.citedreference | T. Chen, V. Balu, S. Katakam, J. Lee, and J. C. Lee, IEEE Trans. Electron Devices IETDAI46, 2304 (1999). | en_US |
dc.identifier.citedreference | P. Padmini, T. R. Taylor, M. J. Lefevre, A. S. Nagra, J. S. Speck, and R. A. York, Appl. Phys. Lett. APPLAB75, 3186 (1999). | en_US |
dc.identifier.citedreference | K. Aizawa and H. Ishiwara, Jpn. J. Appl. Phys., Part 1 JAPNDE33, 5178 (1994). | en_US |
dc.identifier.citedreference | J. Yu, Z. Hong, W. Zhou, G. Cao, J. Xie, and X. Li, Appl. Phys. Lett. APPLAB70, 490 (1997). | en_US |
dc.identifier.citedreference | Y. T. Kim and D. S. Shin, Appl. Phys. Lett. APPLAB71, 3507 (1997). | en_US |
dc.identifier.citedreference | Y. Ishioka et al., in Proceedings of the International Electron Devices Meeting (IEEE, New York, 1995), p. 903. | en_US |
dc.identifier.citedreference | S. Yamamichi et al., in Ref. 9, p. 119. | en_US |
dc.identifier.citedreference | K. P. Lee et al., in Ref. 9, p. 907. | en_US |
dc.identifier.citedreference | E. Fujii et al., in Ref. 9, p. 267. | en_US |
dc.identifier.citedreference | K. Eisenbeiser, J. M. Finder, Z. Yu, J. Ramdani, J. A. Curless, J. A. Hallmark, R. Droopad, W. J. Ooms, L. Salem, S. Bradshaw, and C. D. Overgaard, Appl. Phys. Lett. APPLAB76, 1324 (2000). | en_US |
dc.identifier.citedreference | S. Gasiorowicz, Quantum Physics (Wiley, New York, 1974), p. 86. | en_US |
dc.identifier.citedreference | J. Robertson and W. L. Warren, Mater. Res. Soc. Syno, Oric.ZZZZZZ 361, 123 (1995). | en_US |
dc.identifier.citedreference | K. Abe and S. Komatsu, J. Appl. Phys. JAPIAU77, 6461 (1995). | en_US |
dc.identifier.citedreference | C. S. Hwang, B. T. Lee, C. S. Kang, K. H. Lee, H. Cho, H. Hideki, W. D. Kim, S. I. Lee, and M. Y. Lee, J. Appl. Phys. JAPIAU85, 287 (1999). | en_US |
dc.identifier.citedreference | K. Amanuma, T. Mori, T. Hase, T. Sakuma, A. Ochi, and Y. Miyasaka, Jpn. J. Appl. Phys., Part 1 JAPNDE32, 4153 (1993). | en_US |
dc.owningcollname | Physics, Department of |
Files in this item
Remediation of Harmful Language
The University of Michigan Library aims to describe library materials in a way that respects the people and communities who create, use, and are represented in our collections. Report harmful or offensive language in catalog records, finding aids, or elsewhere in our collections anonymously through our metadata feedback form. More information at Remediation of Harmful Language.
Accessibility
If you are unable to use this file in its current format, please select the Contact Us link and we can modify it to make it more accessible to you.