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A parametric investigation of AlGaAs/GaAs modulation‐doped quantum wires
dc.contributor.authorSherwin, M. E. (Marc E.)en_US
dc.contributor.authorDrummond, Timothy J.en_US
dc.date.accessioned2010-05-06T23:16:59Z
dc.date.available2010-05-06T23:16:59Z
dc.date.issued1989-12-01en_US
dc.identifier.citationSherwin, M. E.; Drummond, T. J. (1989). "A parametric investigation of AlGaAs/GaAs modulation‐doped quantum wires." Journal of Applied Physics 66(11): 5444-5455. <http://hdl.handle.net/2027.42/71149>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/71149
dc.description.abstractPoisson’s and Schrödinger’s equations have been simultaneously solved in cylindrical coordinates for the problem of a cylindrical modulation‐doped quantum well, also referred to as a quantum wire. A transfer matrix method for the solution of Schrödinger’s equation has been implemented for cylindrical coordinates. For the case of a GaAs wire embedded in an AlGaAs host, a parametric investigation was undertaken to determine the effects of aluminum fraction, temperature, well radius, barrier doping, and spacer layer thickness upon the linear electron density within the quantum wire. Transferred electron densities in excess of 106 electrons per cm are easily achievable for a wide range of parameters.en_US
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dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleA parametric investigation of AlGaAs/GaAs modulation‐doped quantum wiresen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109‐2122en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/71149/2/JAPIAU-66-11-5444-1.pdf
dc.identifier.doi10.1063/1.343694en_US
dc.identifier.sourceJournal of Applied Physicsen_US
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dc.owningcollnamePhysics, Department of


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