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Subband gap carrier dynamics in low-temperature-grown GaAs
dc.contributor.authorGrenier, P.en_US
dc.contributor.authorWhitaker, John F.en_US
dc.date.accessioned2010-05-06T23:18:48Z
dc.date.available2010-05-06T23:18:48Z
dc.date.issued1997-04-14en_US
dc.identifier.citationGrenier, P.; Whitaker, J. F. (1997). "Subband gap carrier dynamics in low-temperature-grown GaAs." Applied Physics Letters 70(15): 1998-2000. <http://hdl.handle.net/2027.42/71168>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/71168
dc.description.abstractMeasurements of the carrier relaxation dynamics in low-temperature-grown GaAs have been made with a femtosecond-resolution, time-resolved pump-probe technique using a subband-gap probe-beam wavelength. The transient absorption and index of refraction changes have been analyzed using a relaxation model with up to four different excited state populations. The carrier recombination time within the midgap trap states is found to be longer than the subpicosecond free-carrier trapping time. Two time scales are observed for the recombination rate, one of a few picoseconds and one of hundreds of picoseconds, indicating the presence of at least two different trap states for the free-carriers in this material. © 1997 American Institute of Physics.  en_US
dc.format.extent3102 bytes
dc.format.extent86436 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleSubband gap carrier dynamics in low-temperature-grown GaAsen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumCenter for Ultrafast Optical Science, University of Michigan, Ann Arbor, Michigan 48109-2099en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/71168/2/APPLAB-70-15-1998-1.pdf
dc.identifier.doi10.1063/1.118802en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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