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Conduction band offsets in CdZnSSe/ZnSSe single quantum wells measured by deep level transient spectroscopy

dc.contributor.authorBaude, P. F.en_US
dc.contributor.authorHaase, M. A.en_US
dc.contributor.authorHaugen, G. M.en_US
dc.contributor.authorLaw, K. K.en_US
dc.contributor.authorMiller, T. J.en_US
dc.contributor.authorSmekalin, K.en_US
dc.contributor.authorPhillips, J.en_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.date.accessioned2010-05-06T23:20:59Z
dc.date.available2010-05-06T23:20:59Z
dc.date.issued1996-06-17en_US
dc.identifier.citationBaude, P. F.; Haase, M. A.; Haugen, G. M.; Law, K. K.; Miller, T. J.; Smekalin, K.; Phillips, J.; Bhattacharya, P. (1996). "Conduction band offsets in CdZnSSe/ZnSSe single quantum wells measured by deep level transient spectroscopy." Applied Physics Letters 68(25): 3591-3593. <http://hdl.handle.net/2027.42/71191>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/71191
dc.description.abstractConduction‐band offsets in wide‐band‐gap CdZnSSe/ZnSSe single quantum well structures have been characterized by deep level transient spectroscopy (DLTS) measurements. 50 Å thick Cd0.3Zn0.7S0.06Se0.94 single quantum wells with ZnS0.06Se0.94 barriers were grown by molecular beam epitaxy on GaAs substrates. A thermal emission energy from the quaternary wells of 179±10 meV was measured. This corresponds to a conduction‐band offset energy of ∼251±20 meV. © 1996 American Institute of Physics.en_US
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dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleConduction band offsets in CdZnSSe/ZnSSe single quantum wells measured by deep level transient spectroscopyen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumSolid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109‐2122en_US
dc.contributor.affiliationother3M Company, 3M Center 201‐1N‐35, St. Paul, Minnesota 55144en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/71191/2/APPLAB-68-25-3591-1.pdf
dc.identifier.doi10.1063/1.116647en_US
dc.identifier.sourceApplied Physics Lettersen_US
dc.identifier.citedreferenceM. A. Haase, J. Qiu, J. M. DePuydt, and H. Cheng, Appl. Phys. Lett. APPLABAIP59, 1272 (1991).en_US
dc.identifier.citedreferenceK. K. Law, P. F. Baude, T. J. Miller, M. A. Haase, G. M. Haugen, and K. Smekalin, Electron. Lett. (to be published).en_US
dc.identifier.citedreferenceJ. M. Gaines, R. R. Drenten, K. W. Haberern, T. Marshall, P. Mensz, and J. Petruzello, Appl. Phys. Lett. APPLABAIP62, 2462 (1993).en_US
dc.identifier.citedreferenceM. A. Haase, P. F. Baude, M. S. Hagedorn, Q. Qiu, J. M. DePuydt, H. Cheng, S. Guha, G. E. Hofler, and B. J. Wu, Appl. Phys. Lett. APPLABAIP63, 2115 (1993).en_US
dc.identifier.citedreferenceJ. M. DePuydt, M. S. Haase, S. Guha, J. Qiu, H. Cheng, B. J. Wu, G. E. Hofler, G. Meis-Haugen, M. S. Hagedorn, and P. F. Baude, J. Cryst. Growth JCRGAEINS138, 667 (1994).en_US
dc.identifier.citedreferenceJ. Tersoff, Phys. Rev. Lett. PRLTAOAIP56, 2755 (1986).en_US
dc.identifier.citedreferenceM. Ukita, F. Hiei, K. Nakano, and A. Ishibashi, Appl. Phys. Lett. APPLABAIP66, 209 (1995).en_US
dc.identifier.citedreferenceK. Shahzad, D. J. Olego, and C. G. Van de Walle, Phys. Rev. B PRBMDOAIP38, 1417 (1988).en_US
dc.identifier.citedreferenceW. J. Walecki, A. V. Nurmikko, N. Samarth, H. Luo, J. K. Furdyna, and N. Otsuka, Appl. Phys. Lett. APPLABAIP57, 466 (1990).en_US
dc.identifier.citedreferenceC. Trager-Cowan, P. J. Parbrook, B. Henderson, B. Henderson, and K. P. O’Donnell, Semicond. Sci. Technol. SSTEETINS7, 536 (1992).en_US
dc.identifier.citedreferenceY. Wu, K. Ichino, Y. Kawakami, S. Fijita, and S. Fujita, Jpn. J. Appl. Phys. JAPNDEINS31, 1737 (1992).en_US
dc.identifier.citedreferenceK. Shahzad, J. Petruzzello, J. M. Gaines, and C. Ponzoni, Appl. Phys. Lett. APPLABAIP67, 659 (1995).en_US
dc.identifier.citedreferenceN. Debbar, D. Biswas, and P. Bhattacharya, Phys. Rev. B PRBMDOAIP40, 1058 (1989).en_US
dc.identifier.citedreferenceD. Biswas, N. Debbar, P. Bhattacharya, M. Razeghi, M. Defour, and F. Omnes, Appl. Phys. Lett. APPLABAIP56, 833 (1990).en_US
dc.identifier.citedreferenceD. V. Lang, in Heterojunction Band Discontinuities: Physics and Device Applications, edited by F. Capasso and G. Margaritondo (Elsevier, Amsterdam, 1987).en_US
dc.identifier.citedreferenceB. J. Wu, J. M. DePuydt, G. M. Haugen, G. E. Hofler, M. A. Haase, H. Cheng, S. Guha, and J. Qiu, Appl. Phys. Lett. APPLABAIP66, 3462 (1995).en_US
dc.identifier.citedreferenceJ. Qiu, H. Cheng, J. M. DePuydt, and M. A. Haase, J. Cryst. Growth JCRGAEINS127, 279 (1993).en_US
dc.identifier.citedreferenceH. G. Grimmeiss, E. Meijer, R. Mach, and G. O. Muller, J. Appl. Phys. JAPIAUAIP56, 2678 (1984).en_US
dc.identifier.citedreferenceK. Yoneda, Y. Hishida, and H. Ishii, Appl. Phys. Lett. APPLABAIP47, 702 (1985).en_US
dc.identifier.citedreferenceS. Venkatesan, R. F. Pierret, J. Qiu, M. Kobayashi, R. L. Gunshor, and L. A. Kolodziejski, J. Appl. Phys. JAPIAUAIP66, 3656 (1989).en_US
dc.identifier.citedreferenceB. Hu, G. Karczewski, H. Luo, N. Samarth, and J. K. Furdyna, J. Appl. Phys. JAPIAUAIP63, 358 (1993).en_US
dc.identifier.citedreferenceG. Karczewski, B. Hu, A. Yin, H. Luo, N. Samarath, and J. K. Furdyna, J. Appl. Phys. JAPIAUAIP75, 7382 (1994).en_US
dc.identifier.citedreferenceB. Hu, G. KarczewskiH. Luo, U. Bindley, and J. K. Furdyna, J. Appl. Phys. JAPIAUAIP77, 2026 (1995).en_US
dc.owningcollnamePhysics, Department of


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