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Evidence for field enhanced electron capture by EL2 centers in semi‐insulating GaAs and the effect on GaAs radiation detectors
dc.contributor.authorMcGregor, Douglas S.en_US
dc.contributor.authorRojeski, Ronald A.en_US
dc.contributor.authorKnoll, Glenn F.en_US
dc.contributor.authorTerry, Fred L. Jr.en_US
dc.contributor.authorEast, Jack Royen_US
dc.contributor.authorEisen, Yosefen_US
dc.date.accessioned2010-05-06T23:24:47Z
dc.date.available2010-05-06T23:24:47Z
dc.date.issued1994-06-15en_US
dc.identifier.citationMcGregor, Douglas S.; Rojeski, Ronald A.; Knoll, Glenn F.; Terry, Fred L.; East, Jack; Eisen, Yosef (1994). "Evidence for field enhanced electron capture by EL2 centers in semi‐insulating GaAs and the effect on GaAs radiation detectors." Journal of Applied Physics 75(12): 7910-7915. <http://hdl.handle.net/2027.42/71231>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/71231
dc.description.abstractThe performance of Schottky contact semiconductor radiation detectors fabricated from semi‐insulating GaAs is highly sensitive to charged impurities and defects in the material. The observed behavior of semi‐insulating GaAs Schottky barrier alpha particle detectors does not match well with models that treat the semi‐insulating material as either perfectly intrinsic or as material with deep donors (EL2) of constant capture cross section compensated with shallow acceptors. We propose an explanation for the discrepancy based on enhanced capture of electrons by EL2 centers at high electric fields and the resulting formation of a quasineutral region in the GaAs. Presented is a simple model including field enhanced electron capture which shows good agreement with experimental alpha particle pulse height measurements.en_US
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dc.format.extent788073 bytes
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dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleEvidence for field enhanced electron capture by EL2 centers in semi‐insulating GaAs and the effect on GaAs radiation detectorsen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Nuclear Engineering, University of Michigan, Ann Arbor, Michigan 48109en_US
dc.contributor.affiliationumDepartment of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109en_US
dc.contributor.affiliationotherSoreq Nuclear Research Center, Israel Atomic Energy Commission, Yavne 70600, Israelen_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/71231/2/JAPIAU-75-12-7910-1.pdf
dc.identifier.doi10.1063/1.356577en_US
dc.identifier.sourceJournal of Applied Physicsen_US
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dc.owningcollnamePhysics, Department of


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