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Study of the consequence of excess indium in the active channel of InGaAs/InAlAs high electron mobility transistors on device properties
dc.contributor.authorNg, G. I.en_US
dc.contributor.authorPavlidis, Dimitrisen_US
dc.contributor.authorQuillec, M.en_US
dc.contributor.authorChan, Y. J.en_US
dc.contributor.authorJaffe, Marken_US
dc.contributor.authorSingh, J.en_US
dc.date.accessioned2010-05-06T23:25:19Z
dc.date.available2010-05-06T23:25:19Z
dc.date.issued1988-02-29en_US
dc.identifier.citationNg, G. I.; Pavlidis, D.; Quillec, M.; Chan, Y. J.; Jaffe, M. D.; Singh, J. (1988). "Study of the consequence of excess indium in the active channel of InGaAs/InAlAs high electron mobility transistors on device properties." Applied Physics Letters 52(9): 728-730. <http://hdl.handle.net/2027.42/71236>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/71236
dc.description.abstractA study of the properties of In0.52Al0.48As/In0.53+xGa0.47−xAs high electron mobility transistors is carried out for 0%, 7%, and 12% excess In values in the channel. Theoretical analysis shows that the enhanced In causes a biaxial compressive strain of 0.49% to 0.84% in the channel, increases the band‐edge discontinuity from 0.437 to 0.500 eV, and reduces the carrier mass by 6%. Experimental characterizations support the theoretical predictions by demonstrating an increase of mobility from 9900 to 11 200 cm2/V s at 300 K, and a transconductance enhancement from 160 to at least 230 mS/mm.en_US
dc.format.extent3102 bytes
dc.format.extent349860 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleStudy of the consequence of excess indium in the active channel of InGaAs/InAlAs high electron mobility transistors on device propertiesen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumCenter for High Frequency Microelectronics, Solid State Electronics Laboratories, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109‐2122en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/71236/2/APPLAB-52-9-728-1.pdf
dc.identifier.doi10.1063/1.99361en_US
dc.identifier.sourceApplied Physics Lettersen_US
dc.identifier.citedreferenceA. A. Ketterson, W. T. Masselink, J. S. Gedymin, J. Klem, C. K. Peng, W. F. Kopp, H. Morkoç, and K. R. Gleason, IEEE Trans. Electron Devices ED‐33, 564 (1986).en_US
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dc.identifier.citedreferenceK. Hirose, K. Ohata, T. Mizatani, T. Itoh, and M. Ogawa, in Institute of Physics Conference Series No. 79 (Adam‐Hilger, Bristol, U. K., 1986), Chap. 10, pp. 529–534.en_US
dc.identifier.citedreferenceJ. M. Kuo, B. Lalavic, and T. Y. Chang, in Technical Digest of the International Electron Device Meeting (IEEE, Los Angeles, CA, 1986), pp. 460–463.en_US
dc.identifier.citedreferenceM. D. Jaffe, Y. Sekiguchi, J. Singh, J. J. Chan, D. Pavlidis, and M. Quillec, presented at the IEEE∕Cornell Conference on “Advanced Concepts in High Speed Semiconductor Devices and Circuits,” Cornell, July 1987 (to be published by IEEE, Piscataway, NJ).en_US
dc.identifier.citedreferenceY. Sekiguchi, Y. J. Chan, M. Jaffe, M. Weiss, G. I. Ng, J. Singh, M. Quillec, and D. Pavlidis, presented at the 14th Intl. Symposium on GaAs and Related Compounds, Crete, Greece, Sept. 1987 (to be published in the Inst, of Physics Conference Series, Adam Hilger Ltd., Bristol, U. K.).en_US
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dc.owningcollnamePhysics, Department of


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