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Enhancement in excitonic absorption due to overlap in heavy‐hole and light‐hole excitons in GaAs/InAlGaAs quantum well structures
dc.contributor.authorKothiyal, Govind P.en_US
dc.contributor.authorHong, S.en_US
dc.contributor.authorDebbar, N.en_US
dc.contributor.authorBhattacharya, Pallab K.en_US
dc.contributor.authorSingh, J.en_US
dc.date.accessioned2010-05-06T23:26:45Z
dc.date.available2010-05-06T23:26:45Z
dc.date.issued1987-10-05en_US
dc.identifier.citationKothiyal, G. P.; Hong, S.; Debbar, N.; Bhattacharya, P. K.; Singh, J. (1987). "Enhancement in excitonic absorption due to overlap in heavy‐hole and light‐hole excitons in GaAs/InAlGaAs quantum well structures." Applied Physics Letters 51(14): 1091-1093. <http://hdl.handle.net/2027.42/71251>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/71251
dc.description.abstractIn this letter we present experimental and theoretical results for excitonic transitions in coherently strained GaAs/InGaAlAs multiquantum well structures grown on a GaAs substrate. Absorption spectra of the structure with the substrate removed show an extremely sharp exciton peak with an absorption constant corresponding to nearly twice the value of that in the lattice‐matched GaAs/AlGaAs system. Theoretical calculations suggest that the biaxial tensile strain in the well region, occurring after the substrate is removed, causes the heavy‐hole and light‐hole exciton states to coincide for a specific composition of the quaternary alloy. A comparison between the experiments and theory is made and the potential for devices based on this phenomenon is discussed.en_US
dc.format.extent3102 bytes
dc.format.extent327911 bytes
dc.format.mimetypetext/plain
dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleEnhancement in excitonic absorption due to overlap in heavy‐hole and light‐hole excitons in GaAs/InAlGaAs quantum well structuresen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumCenter for High‐Frequency Microelectronics and Solid State Electronic Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109‐2122en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/71251/2/APPLAB-51-14-1091-1.pdf
dc.identifier.doi10.1063/1.98750en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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