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Study of the low‐temperature line broadening mechanisms for excitonic transitions in GaAs/AlGaAs modulator structures
dc.contributor.authorHong, S.en_US
dc.contributor.authorSingh, Jaspriten_US
dc.date.accessioned2010-05-06T23:27:02Z
dc.date.available2010-05-06T23:27:02Z
dc.date.issued1986-08-11en_US
dc.identifier.citationHong, S.; Singh, Jasprit (1986). "Study of the low‐temperature line broadening mechanisms for excitonic transitions in GaAs/AlGaAs modulator structures." Applied Physics Letters 49(6): 331-333. <http://hdl.handle.net/2027.42/71254>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/71254
dc.description.abstractWe examine the dominant line broadening mechanisms for excitonic lines in a quantum well in the presence of strong transverse electric fields. We have calculated the line broadening due to interface roughness effects and lifetime broadening effects. We find that the line broadening effects due to interface roughness increase rapidly as the transverse electric field is increased and for a 100‐Å Al0.3Ga0.7As/GaAs well, increase by a factor of ∼2.0 as the field is increased from 0 to 100 kV/cm. The broadening due to lifetime effects is very sensitive to the band lineup assumed and is much smaller than interface roughness effects even for one monolayer interface roughness.en_US
dc.format.extent3102 bytes
dc.format.extent264144 bytes
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dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleStudy of the low‐temperature line broadening mechanisms for excitonic transitions in GaAs/AlGaAs modulator structuresen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumThe University of Michigan, Department of Electrical Engineering and Computer Science, Ann Arbor, Michigan 48109en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/71254/2/APPLAB-49-6-331-1.pdf
dc.identifier.doi10.1063/1.97158en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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