Microstructure of low temperature grown AlN thin films on Si(111)
dc.contributor.author | Auner, Gregory W. | en_US |
dc.contributor.author | Jin, F. | en_US |
dc.contributor.author | Naik, Vaman M. | en_US |
dc.contributor.author | Naik, Ratna | en_US |
dc.date.accessioned | 2010-05-06T23:28:29Z | |
dc.date.available | 2010-05-06T23:28:29Z | |
dc.date.issued | 1999-06-01 | en_US |
dc.identifier.citation | Auner, G. W.; Jin, F.; Naik, V. M.; Naik, R. (1999). "Microstructure of low temperature grown AlN thin films on Si(111)." Journal of Applied Physics 85(11): 7879-7883. <http://hdl.handle.net/2027.42/71269> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/71269 | |
dc.description.abstract | AlN thin films were grown on HF-etched Si(111) substrates at 400–600 °C400–600°C by plasma source molecular beam epitaxy. Reflection high energy electron diffraction and transmission electron microscopy studies show that AlN films grown at 400 °C400°C form an initial amorphous region at the interface, followed by cc-axis oriented columnar grains with slightly different tilts and twists. AlN films grown at 600 °C600°C showed a significantly reduced amorphous region near the interface promoting an epitaxial growth of AlN with AlN[0001]∥Si[111]AlN[0001]∥Si[111] and AlN[010]∥Si[11]AlN[011̄0]∥Si[112̄] orientations. However, all the films show numerous defects such as stacking faults, dislocations, and grain boundaries. © 1999 American Institute of Physics. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 682349 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Microstructure of low temperature grown AlN thin films on Si(111) | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Electrical and Computer Engineering Department, Wayne State University, Detroit, Michigan 48202 | en_US |
dc.contributor.affiliationum | Department of Natural Sciences, University of Michigan–Dearborn, Dearborn, Michigan 48128 | en_US |
dc.contributor.affiliationum | Department of Physics and Astronomy, Wayne State University, Detroit, Michigan 48202 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/71269/2/JAPIAU-85-11-7879-1.pdf | |
dc.identifier.doi | 10.1063/1.370600 | en_US |
dc.identifier.source | Journal of Applied Physics | en_US |
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dc.owningcollname | Physics, Department of |
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