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Hydrogen sulfide plasma passivation of gallium arsenide

dc.contributor.authorHerman, J. S.en_US
dc.contributor.authorTerry, Fred L. Jr.en_US
dc.date.accessioned2010-05-06T23:29:11Z
dc.date.available2010-05-06T23:29:11Z
dc.date.issued1992-02-10en_US
dc.identifier.citationHerman, J. S.; Terry, F. L. (1992). "Hydrogen sulfide plasma passivation of gallium arsenide." Applied Physics Letters 60(6): 716-717. <http://hdl.handle.net/2027.42/71276>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/71276
dc.description.abstractImprovement in the electrical properties of the GaAs surface has been accomplished using a room‐temperature hydrogen sulfide plasma. The surface has then been protected by a 300 °C plasma enhanced chemical vapor deposition (PECVD) SiO2 film. This treatment is highly reproducible due to computer control of process parameters and long‐lasting due to the SiO2 cap. Improved C‐V characteristics were observed, showing interface trap densities in the high 1011 cm−2 eV−1 range. Photoluminescence (PL) measurements on the sulfided samples showed increased intensity over the untreated samples.en_US
dc.format.extent3102 bytes
dc.format.extent235564 bytes
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dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleHydrogen sulfide plasma passivation of gallium arsenideen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumCenter for High Frequency Microelectronics, Electrical Engineering and Computer Science Department, University of Michigan, Ann Arbor, Michigan 48109‐2122en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/71276/2/APPLAB-60-6-716-1.pdf
dc.identifier.doi10.1063/1.106547en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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