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Charged carrier transport in Si1−xGex pseudomorphic alloys matched to Si—strain‐related transport improvements
dc.contributor.authorHinckley, John M.en_US
dc.contributor.authorSankaran, Vasuen_US
dc.contributor.authorSingh, J.en_US
dc.date.accessioned2010-05-06T23:31:04Z
dc.date.available2010-05-06T23:31:04Z
dc.date.issued1989-11-06en_US
dc.identifier.citationHinckley, J. M.; Sankaran, V.; Singh, J. (1989). "Charged carrier transport in Si1−xGex pseudomorphic alloys matched to Si—strain‐related transport improvements." Applied Physics Letters 55(19): 2008-2010. <http://hdl.handle.net/2027.42/71296>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/71296
dc.description.abstractCharge carrier transport studies are reported for Si1−xGex pseudomorphic alloy layers matched to the (001) Si substrate lattice constant. The effect of biaxial compressive strain on transport is studied by first examining the band structure changes via deformation potential theory and then studying the transport via a generalized Monte Carlo approach. Marked improvements in in‐plane hole transport are obtained while significant improvements also occur in the out‐of‐plane electron transport. These changes are ideally suited for use in n(Si)‐p(Si1−xGex)‐n(Si) heterojunction bipolar transistors.en_US
dc.format.extent3102 bytes
dc.format.extent320724 bytes
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dc.format.mimetypeapplication/pdf
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleCharged carrier transport in Si1−xGex pseudomorphic alloys matched to Si—strain‐related transport improvementsen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumCenter for High Frequency Microelectronics, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109‐2122en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/71296/2/APPLAB-55-19-2008-1.pdf
dc.identifier.doi10.1063/1.102147en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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