Subpicosecond carrier lifetime in GaAs grown by molecular beam epitaxy at low temperatures
dc.contributor.author | Gupta, S. | en_US |
dc.contributor.author | Frankel, M. Y. | en_US |
dc.contributor.author | Valdmanis, J. A. | en_US |
dc.contributor.author | Whitaker, John F. | en_US |
dc.contributor.author | Mourou, Gerard A. | en_US |
dc.contributor.author | Smith, F. W. | en_US |
dc.contributor.author | Calawa, A. R. | en_US |
dc.date.accessioned | 2010-05-06T23:33:10Z | |
dc.date.available | 2010-05-06T23:33:10Z | |
dc.date.issued | 1991-12-16 | en_US |
dc.identifier.citation | Gupta, S.; Frankel, M. Y.; Valdmanis, J. A.; Whitaker, J. F.; Mourou, G. A.; Smith, F. W.; Calawa, A. R. (1991). "Subpicosecond carrier lifetime in GaAs grown by molecular beam epitaxy at low temperatures." Applied Physics Letters 59(25): 3276-3278. <http://hdl.handle.net/2027.42/71318> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/71318 | |
dc.description.abstract | Epitaxial GaAs grown by molecular beam epitaxy (MBE) at low substrate temperatures is observed to have a significantly shorter carrier lifetime than GaAs grown at normal substrate temperatures. Using femtosecond time‐resolved‐reflectance techniques, a sub‐picosecond (<0.4 ps) carrier lifetime has been measured for GaAs grown by MBE at ∼200°C and annealed at 600 °C. With the same material as a photoconductive switch we have measured electrical pulses with a full‐width at half‐maximum of 0.6 ps using the technique of electro‐optic sampling. Good responsivity for a photoconductive switch is observed, corresponding to a mobility of the photoexcited carriers of ∼120–150 cm2/V s. GaAs grown by MBE at 200 °C and annealed at 600 °C is also semi‐insulating, which results in a low dark current in the switch application. The combination of fast recombination lifetime, high carrier mobility, and high resistivity makes this material ideal for a number of subpicosecond photoconductive applications. | en_US |
dc.format.extent | 3102 bytes | |
dc.format.extent | 446394 bytes | |
dc.format.mimetype | text/plain | |
dc.format.mimetype | application/pdf | |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Subpicosecond carrier lifetime in GaAs grown by molecular beam epitaxy at low temperatures | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Ultrafast Science Laboratory, Room 1006 IST Building, University of Michigan, 2200 Bonisteel, Ann Arbor, Michigan 48109‐2099 | en_US |
dc.contributor.affiliationother | Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173‐9108 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/71318/2/APPLAB-59-25-3276-1.pdf | |
dc.identifier.doi | 10.1063/1.105729 | en_US |
dc.identifier.source | Applied Physics Letters | en_US |
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dc.owningcollname | Physics, Department of |
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