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Smoothening of Cu films grown on Si(001)
dc.contributor.authorLukaszew, Rosa A.en_US
dc.contributor.authorSheng, Yongningen_US
dc.contributor.authorUher, Ctiraden_US
dc.contributor.authorClarke, Royen_US
dc.date.accessioned2010-05-06T23:34:23Z
dc.date.available2010-05-06T23:34:23Z
dc.date.issued2000-02-07en_US
dc.identifier.citationLukaszew, R. A.; Sheng, Y.; Uher, C.; Clarke, R. (2000). "Smoothening of Cu films grown on Si(001)." Applied Physics Letters 76(6): 724-726. <http://hdl.handle.net/2027.42/71331>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/71331
dc.description.abstractWe report an in situ study of the molecular-beam epitaxy growth and annealing of Cu(001) films grown on hydrogen-terminated Si(001) substrates, resulting in a promising approach to achieve smooth epitaxial morphology. Using correlated reflection high-energy electron diffraction and scanning tunneling microscopy data, we find a temperature interval below the onset of silicide formation where a dramatic smoothening of the epitaxial Cu surfaces occurs. Our measurements indicate that a reduction in roughness is possible in this regime because the annealing is controlled by lateral diffusion kinetics. © 2000 American Institute of Physics.en_US
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dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleSmoothening of Cu films grown on Si(001)en_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumRandall Laboratory of Physics, University of Michigan, Ann Arbor, Michigan 48109-1120en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/71331/2/APPLAB-76-6-724-1.pdf
dc.identifier.doi10.1063/1.125874en_US
dc.identifier.sourceApplied Physics Lettersen_US
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dc.owningcollnamePhysics, Department of


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