Amorphous In-Ga-Zn-O Thin Film Transistor for Future Optoelectronics.
dc.contributor.author | Fung, Tze-Ching | en_US |
dc.date.accessioned | 2010-06-03T15:39:37Z | |
dc.date.available | NO_RESTRICTION | en_US |
dc.date.available | 2010-06-03T15:39:37Z | |
dc.date.issued | 2010 | en_US |
dc.date.submitted | en_US | |
dc.identifier.uri | https://hdl.handle.net/2027.42/75856 | |
dc.description.abstract | After initial report of its potential use for flexible/large area electronics, amorphous In-Ga-Zn-O (a-IGZO) is now emerging worldwide as a new semiconductor for next gen-eration thin-film transistor (TFT) flat panel displays and imagers. This dissertation work examines in detail the basic properties and physics of the a-IGZO TFTs, including the photofield-effect, numerical simulations, electrical instability and noise characteristics. Our a-IGZO TFTs have following electrical performance: field-effect mobility (μeff) of 7~12.3 cm2V-1s-1, threshold voltage of 1~3V, subthreshold swing of 130~420mV/decade and on/off current ratio over 108. Aluminum and titanium are both suitable for source/drain (S/D) electrodes with the contact resistivity (rC) lower than 10-3Ω-cm2. The active layer thickness was also found to have a major impact on S/D series resistance. To accurately model the TFT current-voltage (I/V) properties, a gate-to-source voltage dependent μeff model is proposed. Light wavelength and intensity dependent photo-responses were studied. The a-IGZO TFT is stable under visible light illumination (460~660nm). TFT off-state drain current starts to increase when the photon energy is higher than its band-gap (~3.05eV); and we observed a high UV-photocurrent conversion efficiency. In addition, the a-IGZO mid-gap density-of-states (DOS) was extracted and is more than an order of magnitude lower than the values of hydrogenated amorphous silicon (a-Si:H). The DOS model for a-IGZO was then developed. In this model, the donor-like states are proposed to be associated with oxygen vacancy in a-IGZO. We showed through numerical simulation that the a-IGZO TFT has a very sharp conduction band-tail slope (Ea=13meV). The impacts of rC and DOS on TFT electrical properties were also studied. Bias-temperature-stress (BTS) induced electrical instability was investigated. Our re-sults suggest that the observed shifts in TFT I/V curves are primarily due to channel charge injection/trapping. The validity of using stretched-exponential model in simulating the time, voltage and temperature dependences of BTS data was demonstrated for a-IGZO TFTs. Finally, the TFT low frequency noise properties were examined. The 1/f noise is the dominant source in a-IGZO TFT and can be modeled by Hooge mobility fluctuation theory. The a-IGZO has a lower Hooge’s parameter than a-Si:H and may be better used in imaging applications. | en_US |
dc.format.extent | 5215876 bytes | |
dc.format.extent | 1373 bytes | |
dc.format.mimetype | application/pdf | |
dc.format.mimetype | text/plain | |
dc.language.iso | en_US | en_US |
dc.subject | A-IGZO | en_US |
dc.subject | Amorphous Oxide Semiconductor | en_US |
dc.subject | Thin-film Transistor | en_US |
dc.subject | TFT | en_US |
dc.subject | Amorphous Semiconductor | en_US |
dc.title | Amorphous In-Ga-Zn-O Thin Film Transistor for Future Optoelectronics. | en_US |
dc.type | Thesis | en_US |
dc.description.thesisdegreename | PhD | en_US |
dc.description.thesisdegreediscipline | Electrical Engineering | en_US |
dc.description.thesisdegreegrantor | University of Michigan, Horace H. Rackham School of Graduate Studies | en_US |
dc.contributor.committeemember | Kanicki, Jerzy | en_US |
dc.contributor.committeemember | Kurdak, Cagliyan | en_US |
dc.contributor.committeemember | Phillips, Jamie Dean | en_US |
dc.contributor.committeemember | Wise, Kensall D. | en_US |
dc.subject.hlbsecondlevel | Electrical Engineering | en_US |
dc.subject.hlbtoplevel | Engineering | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/75856/1/tcfung_1.pdf | |
dc.owningcollname | Dissertations and Theses (Ph.D. and Master's) |
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