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Asperity heating for repair of metal contact RF-MEMS switches

dc.contributor.authorJensen, Brian D.en_US
dc.contributor.authorHuang, Kuangweien_US
dc.contributor.authorChow, Linda L. W.en_US
dc.contributor.authorSaitou, Kazuhiroen_US
dc.contributor.authorVolakis John L.en_US
dc.contributor.authorKurabayashi, Katsuoen_US
dc.date.accessioned2011-11-14T16:30:53Z
dc.date.available2011-11-14T16:30:53Z
dc.date.issued2004-06-06en_US
dc.identifier.citationJensen, B.; Huang, K.; Chow, L.; Saitou, K.; Volakis J.; Kurabayashi, K. (2004). Asperity heating for repair of metal contact RF-MEMS switches." Proceedings of the IEEE International Microwave Symposium: 1939-1942. <http://hdl.handle.net/2027.42/87250>en_US
dc.identifier.issn0149-645Xen_US
dc.identifier.urihttps://hdl.handle.net/2027.42/87250
dc.description.abstractWe have experimentally observed the failure of metal contact RF MEMS switches due to a rapid rise in contact resistance during switching. We were able to repair the failed switches through heating the contact asperities by applying sufficient contact voltage. The data suggest the hypothesis that increasing contact resistance is caused by strain hardening of the contact surface. With this understanding, appropriate corrective measures can be taken to overcome failure, and suggestions for doing so are given in the paper.en_US
dc.publisherIEEEen_US
dc.titleAsperity heating for repair of metal contact RF-MEMS switchesen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelMechanical Engineeringen_US
dc.subject.hlbtoplevelEngineeringen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Mechanical Engineeringen_US
dc.contributor.affiliationotherDepartment of Electrical Engineering, Ohio State University, Columbus, OH, 43210, USA.en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/87250/4/Saitou87.pdf
dc.identifier.doi10.1109/MWSYM.2004.1338989en_US
dc.identifier.sourceProceedings of the IEEE International Microwave Symposiumen_US
dc.owningcollnameMechanical Engineering, Department of


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