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Effect of Nanoscale Heating on Electrical Transport in RF MEMS Switch Contacts

dc.contributor.authorJensen, Brian D.en_US
dc.contributor.authorChow, Linda L. W.en_US
dc.contributor.authorHuang, Kuangweien_US
dc.contributor.authorSaitou, Kazuhiroen_US
dc.contributor.authorVolakis, John Leonidasen_US
dc.contributor.authorKurabayashi, Katsuoen_US
dc.date.accessioned2011-11-14T16:31:08Z
dc.date.available2011-11-14T16:31:08Z
dc.date.issued2005-10-10en_US
dc.identifier.citationJensen, B. D.; Chow, L. L.-W.; Huang, K.; Saitou, K.; Volakis, J. L.; Kurabayashi, K. (2005). Effect of Nanoscale Heating on Electrical Transport in RF MEMS Switch Contacts." IEEE/ASME Journal of Microelectromechanical Systems 14(5): 935-946. <http://hdl.handle.net/2027.42/87261>en_US
dc.identifier.issn1057-7157en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/87261
dc.description.abstractThis paper explores contact heating in microelectromechanical systems (MEMS) switches with contact spot sizes less than 100 nm in diameter. Experiments are conducted to demonstrate that contact heating causes a drop in contact resistance. However, existing theory is shown to over-predict heating for MEMS switch contacts because it does not consider ballistic transport of electrons in the contact. Therefore, we extend the theory and develop a predictive model that shows excellent agreement with the experimental results. It is also observed that mechanical cycling causes an increase in contact resistance. We identify this effect as related to the build-up of an insulating film and demonstrate operational conditions to prevent an increase in contact resistance. The improved understanding of contact behavior gained through our modeling and experiments allows switch performance to be improved.en_US
dc.publisherIEEEen_US
dc.titleEffect of Nanoscale Heating on Electrical Transport in RF MEMS Switch Contactsen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelMechanical Engineeringen_US
dc.subject.hlbtoplevelEngineeringen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Mechanical Engineeringen_US
dc.contributor.affiliationotherThe Department of Mechanical Engineering, Brigham Young University, Provo, UT 84602 USA. the Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43212 USA.en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/87261/4/Saitou21.pdf
dc.identifier.doi10.1109/JMEMS.2005.856653en_US
dc.identifier.sourceJournal of Microelectromechanical Systemsen_US
dc.owningcollnameMechanical Engineering, Department of


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