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Lifetime Extension of RF MEMS Direct Contact Switches in Hot-Switching Operations by Ball-Grid-Array (BGA) Dimple Design
dc.contributor.authorChow, Linda L. W.en_US
dc.contributor.authorVolakis, John Leonidasen_US
dc.contributor.authorSaitou, Kazuhiroen_US
dc.contributor.authorKurabayashi, Katsuoen_US
dc.date.accessioned2011-11-14T16:31:18Z
dc.date.available2011-11-14T16:31:18Z
dc.date.issued2007-05-29en_US
dc.identifier.citationChow, L.; Volakis, J.; Saitou, K.; Kurabayashi, K. (2007). Lifetime Extension of RF MEMS Direct Contact Switches in Hot-Switching Operations by Ball-Grid-Array (BGA) Dimple Design." IEEE Electron Device Letters 28(6): 479-481. <http://hdl.handle.net/2027.42/87268>en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/87268
dc.description.abstractDirect contact RF microelectromechanical systems switches have demonstrated excellent ultrawideband performance from dc to 100 GHz. However, they are prone to failures due to contact adhesion and arcing, particularly for pure-gold/pure-gold contacts. In this letter, we present a new contact design employing ball grid array (BGA) dimples that limit the effective contact area to a few tens of nanometers in diameter. We experimentally show the performance of the BGA dimple with pure-gold/pure-gold contacts and demonstrate RF power handling greater than 1 W during hot switching in excess of 100 million cycles.en_US
dc.publisherIEEEen_US
dc.titleLifetime Extension of RF MEMS Direct Contact Switches in Hot-Switching Operations by Ball-Grid-Array (BGA) Dimple Designen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelMechanical Engineeringen_US
dc.subject.hlbtoplevelEngineeringen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Mechanical Engineeringen_US
dc.contributor.affiliationotherthe Department of Electrical and Computer Engineering, Ohio State University, Columbus, OH 43212 USA.en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/87268/4/Saitou10.pdf
dc.identifier.doi10.1109/LED.2007.896811en_US
dc.identifier.sourceIEEE Electron Device Lettersen_US
dc.owningcollnameMechanical Engineering, Department of


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