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Effects of x-ray irradiation on polycrystalline silicon, thin-film transistors
dc.contributor.authorLi, Yixinen_US
dc.contributor.authorAntonuk, Larry E.en_US
dc.contributor.authorEl-Mohri, Youcefen_US
dc.contributor.authorZhao, Qihuaen_US
dc.contributor.authorDu, Hongen_US
dc.contributor.authorSawant, Amiten_US
dc.contributor.authorWang, Yien_US
dc.date.accessioned2011-11-15T16:01:23Z
dc.date.available2011-11-15T16:01:23Z
dc.date.issued2006-03-15en_US
dc.identifier.citationLi, Yixin; Antonuk, Larry E.; El-Mohri, Youcef; Zhao, Qihua; Du, Hong; Sawant, Amit; Wang, Yi (2006). "Effects of x-ray irradiation on polycrystalline silicon, thin-film transistors." Journal of Applied Physics 99(6): 064501-064501-7. <http://hdl.handle.net/2027.42/87455>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/87455
dc.description.abstractThe effects of x-ray irradiation on the transfer and noise characteristics of excimer-laser-annealed polycrystalline silicon (poly-Si) thin-film transistors (TFTs) have been examined at dose levels up to 1000 Gy1000Gy. Parameters including mobility, threshold voltage, subthreshold swing, and leakage current, as well as flicker and thermal noise coefficients, were determined as a function of dose. In addition, the physical mechanisms of the observed changes in these parameters are analyzed in terms of radiation-generated charge in the gate oxide, at the Si–SiO2Si–SiO2 interface, and at the grain boundaries. The results of the studies indicate that poly-Si TFTs exhibit sufficient radiation tolerance for the use in active-matrix flat-panel imagers for most medical x-ray applications.en_US
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleEffects of x-ray irradiation on polycrystalline silicon, thin-film transistorsen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Radiation Oncology, University of Michigan, 519 West William Street, Ann Arbor, Michigan 48103-4943en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/87455/2/064501_1.pdf
dc.identifier.doi10.1063/1.2179149en_US
dc.identifier.sourceJournal of Applied Physicsen_US
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dc.owningcollnamePhysics, Department of


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