Stress evolution in GaAsN alloy films
dc.contributor.author | Reason, M. | en_US |
dc.contributor.author | Weng, X. | en_US |
dc.contributor.author | Ye, W. | en_US |
dc.contributor.author | Dettling, D. | en_US |
dc.contributor.author | Hanson, S. | en_US |
dc.contributor.author | Obeidi, G. | en_US |
dc.contributor.author | Goldman, R. S. | en_US |
dc.date.accessioned | 2011-11-15T16:03:48Z | |
dc.date.available | 2011-11-15T16:03:48Z | |
dc.date.issued | 2005-05-15 | en_US |
dc.identifier.citation | Reason, M.; Weng, X.; Ye, W.; Dettling, D.; Hanson, S.; Obeidi, G.; Goldman, R. S. (2005). "Stress evolution in GaAsN alloy films." Journal of Applied Physics 97(10): 103523-103523-7. <http://hdl.handle.net/2027.42/87566> | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/87566 | |
dc.description.abstract | We have investigated stress evolution in dilute nitride GaAs1−xNxGaAs1−xNx alloy films grown by plasma-assisted molecular-beam epitaxy. For coherently strained films (x<2.5%)(x<2.5%), a comparison of stresses measured via in situ wafer curvature measurements, with those determined from x-ray rocking curves using a linear interpolation of lattice parameter and elastic constants, suggests significant bowing of the elastic properties of GaAsN. The observed stress differences are used to quantify the composition-dependent elastic constant bowing parameters. For films with x>2.5%x>2.5%, in situ wafer curvature measurements reveal a signature for stress relaxation. Atomic force microscopy and transmission electron microscopy measurements indicate that stress relaxation occurs by a combination of elastic relaxation via island formation and plastic relaxation associated with the formation of stacking faults. | en_US |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Stress evolution in GaAsN alloy films | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/87566/2/103523_1.pdf | |
dc.identifier.doi | 10.1063/1.1900289 | en_US |
dc.identifier.source | Journal of Applied Physics | en_US |
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