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Thermoelectric performance of films in the bismuth-tellurium and antimony-tellurium systems
dc.contributor.authorda Silva, Luciana W.en_US
dc.contributor.authorKaviany, Massouden_US
dc.contributor.authorUher, Ctiraden_US
dc.date.accessioned2011-11-15T16:04:17Z
dc.date.available2011-11-15T16:04:17Z
dc.date.issued2005-06-01en_US
dc.identifier.citationda Silva, Luciana W.; Kaviany, Massoud; Uher, Ctirad (2005). "Thermoelectric performance of films in the bismuth-tellurium and antimony-tellurium systems." Journal of Applied Physics 97(11): 114903-114903-10. <http://hdl.handle.net/2027.42/87588>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/87588
dc.description.abstractCoevaporated bismuth-tellurium and antimony-tellurium films were fabricated under various deposition conditions (controlled evaporation rates of individual species, substrate temperature, and substrate material), and their thermoelectric (TE) properties (Seebeck coefficient, electrical resistivity, and carrier concentration) were measured in search of optimal TE performance. The tellurium atomic concentration was varied from 48% to 74%, the substrate temperature ranged from 130 to 300 °C, and glass, mica, magnesium oxide, and sapphire substrates were used. The chemical composition and crystal structure of the films were recorded (using microprobe and x-ray diffractometer, respectively), analyzed, and compared with available standard Bi2Te3Bi2Te3 and Sb2Te3Sb2Te3 single-crystal samples. High-performance TE films had tellurium atomic concentration around 60% and were deposited at a substrate temperature between 260 and 270 °C.en_US
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleThermoelectric performance of films in the bismuth-tellurium and antimony-tellurium systemsen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumUniversity of Michigan, Ann Arbor, Michigan 48109en_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/87588/2/114903_1.pdf
dc.identifier.doi10.1063/1.1914948en_US
dc.identifier.sourceJournal of Applied Physicsen_US
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dc.owningcollnamePhysics, Department of


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