Electronic structure of monoclinic BaBiO3
dc.contributor.author | Shen, Z.‐X. | en_US |
dc.contributor.author | Lindberg, P. A. P. | en_US |
dc.contributor.author | Wells, B. O. | en_US |
dc.contributor.author | Dessau, D. S. | en_US |
dc.contributor.author | Borg, A. | en_US |
dc.contributor.author | Lindau, I. | en_US |
dc.contributor.author | Spicer, W. E. | en_US |
dc.contributor.author | Ellis, W. P. | en_US |
dc.contributor.author | Kwei, G. H. | en_US |
dc.contributor.author | Ott, K. C. | en_US |
dc.contributor.author | Kang, J. ‐S. | en_US |
dc.contributor.author | Allen, J. W. | en_US |
dc.date.accessioned | 2011-11-15T16:05:08Z | |
dc.date.available | 2011-11-15T16:05:08Z | |
dc.date.issued | 1990-01-25 | en_US |
dc.identifier.citation | Shen, Z.‐X.; Lindberg, P. A. P.; Wells, B. O.; Dessau, D. S.; Borg, A.; Lindau, I.; Spicer, W. E.; Ellis, W. P.; Kwei, G. H.; Ott, K. C.; Kang, J.‐S.; Allen, J. W. (1990). "Electronic structure of monoclinic BaBiO3." AIP Conference Proceedings 200(1): 30-35. <http://hdl.handle.net/2027.42/87627> | en_US |
dc.identifier.other | APCPCS-200-1 | en_US |
dc.identifier.uri | https://hdl.handle.net/2027.42/87627 | |
dc.description.abstract | We present the results of photoemission studies of ‘‘valence disordered’’ monoclinic BaBiO3 in the photon energy range 15–120 eV. The line‐shapes of the valence band photoemission spectra and the Ba contributions to the valence band are very similar to the line shapes of the total density of states and Ba partial density of states, respectively. Oxygen resonance is observed, demonstrating the existence of empty O 2p states. These results support a more covalent rather than a simple ionic picture for the electronic states of BaBiO3. | en_US |
dc.publisher | The American Institute of Physics | en_US |
dc.rights | © The American Institute of Physics | en_US |
dc.title | Electronic structure of monoclinic BaBiO3 | en_US |
dc.type | Article | en_US |
dc.subject.hlbsecondlevel | Physics | en_US |
dc.subject.hlbtoplevel | Science | en_US |
dc.description.peerreviewed | Peer Reviewed | en_US |
dc.contributor.affiliationum | University of Michigan, Ann Arbor, Michigan 48109‐1120 | en_US |
dc.contributor.affiliationother | Stanford Electronics Laboratories, Stanford University, Stanford, California 94305 | en_US |
dc.contributor.affiliationother | Los Alamos National Laboratory, Los Alamos, New Mexico 87545 | en_US |
dc.description.bitstreamurl | http://deepblue.lib.umich.edu/bitstream/2027.42/87627/2/30_1.pdf | |
dc.identifier.doi | 10.1063/1.39049 | en_US |
dc.identifier.source | High Tc superconducting thin films: processing, characterization, and applications | en_US |
dc.owningcollname | Physics, Department of |
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