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Carrier-mediated ferromagnetism in vanadium-doped (Sb1−xBix)2Te3(Sb1−xBix)2Te3 solid solutions

dc.contributor.authorZhou, Zhenhuaen_US
dc.contributor.authorUher, Ctiraden_US
dc.contributor.authorZabcik, Mareken_US
dc.contributor.authorLostak, Petren_US
dc.date.accessioned2011-11-15T16:08:17Z
dc.date.available2011-11-15T16:08:17Z
dc.date.issued2006-05-08en_US
dc.identifier.citationZhou, Zhenhua; Uher, Ctirad; Zabcik, Marek; Lostak, Petr (2006). "Carrier-mediated ferromagnetism in vanadium-doped (Sb1−xBix)2Te3(Sb1−xBix)2Te3 solid solutions." Applied Physics Letters 88(19): 192502-192502-3. <http://hdl.handle.net/2027.42/87768>en_US
dc.identifier.urihttps://hdl.handle.net/2027.42/87768
dc.description.abstractFerromagnetism in tetradymite-type diluted magnetic semiconductors (Sb1−xBix)1.98V0.02Te3(Sb1−xBix)1.98V0.02Te3 (0 ⩽ x ⩽ 1)(0⩽x⩽1) is revealed to be of hole-mediated nature. The increasing replacement of antimony with bismuth results in a monotonous decrease of the hole concentration and the Curie temperature while the electrical resistivity increases. The value of the Curie temperature shows a linear dependence of Np1/3Np1∕3, where NN is the vanadium concentration and pp is the concentration of hole. This trend agrees with the mean-field theory predictions.en_US
dc.publisherThe American Institute of Physicsen_US
dc.rights© The American Institute of Physicsen_US
dc.titleCarrier-mediated ferromagnetism in vanadium-doped (Sb1−xBix)2Te3(Sb1−xBix)2Te3 solid solutionsen_US
dc.typeArticleen_US
dc.subject.hlbsecondlevelPhysicsen_US
dc.subject.hlbtoplevelScienceen_US
dc.description.peerreviewedPeer Revieweden_US
dc.contributor.affiliationumDepartment of Physics, University of Michigan, Ann Arbor, Michigan 48109en_US
dc.contributor.affiliationotherFaculty of Chemical Technology, University of Pardubice, 532 10 Pardubice, Czech Republicen_US
dc.description.bitstreamurlhttp://deepblue.lib.umich.edu/bitstream/2027.42/87768/2/192502_1.pdf
dc.identifier.doi10.1063/1.2200738en_US
dc.identifier.sourceApplied Physics Lettersen_US
dc.identifier.citedreferenceT. L. Anderson and H. B. Krause, Acta Crystallogr., Sect. B: Struct. Crystallogr. Cryst. Chem. B30, 1307 (1974).en_US
dc.identifier.citedreferenceD. L. Lovett, Semimetals and Narrow-Band Gap Semiconductors (Pion, London, 1977).en_US
dc.identifier.citedreferenceS. Cho, Y. Kim, A. DiVenere, G. K. Wong, J. B. Ketterson, and J. R. Meyer, Appl. Phys. Lett. 75, 1401 (1999).en_US
dc.identifier.citedreferenceB. Roy, B. R. Chakraborty, R. Bhattacharya, and A. K. Dutta, Solid State Commun. 25, 617 (1978).en_US
dc.identifier.citedreferenceJ. Horák, L. Tichý, P. Lošták, and A. Vaško, Cryst. Lattice Defects 6, 233 (1976).en_US
dc.identifier.citedreferenceY. Kim, A. DiVenere, G. K. L. Wong, J. B. Ketterson, S. Cho, and J. R. Meyer, J. Appl. Phys. 91, 715 (2002).en_US
dc.identifier.citedreferenceJ. S. Dyck, P. Hájek, P. Lošták, and C. Uher, Phys. Rev. B 65, 115212 (2002).en_US
dc.identifier.citedreferenceJ. S. Dyck, W. Chen, P. Hájek, P. Lot’ák, and C. Uher, Physica B 312, 820 (2002).en_US
dc.identifier.citedreferenceJ. S. Dyck, Č. Drašar, P. Lošták, and C. Uher, Phys. Rev. B 71, 115214 (2005).en_US
dc.identifier.citedreferenceV. A. Kulbachinskii, P. M. Tarasov, and E. Bruek, JETP Lett. 81, 342 (2005).en_US
dc.identifier.citedreferenceZ. Zhou, Y.-J. Chien, and C. Uher, Appl. Phys. Lett. 87, 112503 (2005).en_US
dc.identifier.citedreferenceY.-J. Chien, Z. Zhou, and C. Uher, J. Cryst. Growth 283, 309 (2005).en_US
dc.identifier.citedreferenceH. J. Goldsmid, Br. J. Appl. Phys. 11, 209 (1960).en_US
dc.identifier.citedreferenceS. von Molnar and T. Kasuya, Phys. Rev. Lett. 21, 1757 (1968).en_US
dc.identifier.citedreferenceT. Kasuya, Prog. Theor. Phys. 16, 45 (1956).en_US
dc.identifier.citedreferenceC. H. Ziener, S. Glutsch, and F. Bechstedt, Phys. Rev. B 70, 075205 (2004).en_US
dc.identifier.citedreferenceJ. Schliemann, J. König, H.-H. Lin, and A. H. MacDonald, Appl. Phys. Lett. 78, 1550 (2001).en_US
dc.owningcollnamePhysics, Department of


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